Method for fabricating lED chip comprising reduced mask count
View Patent ↗A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
1. A method for fabricating a light emitting diode chip, comprising:
forming a first patterned photoresist layer on a substrate, wherein the first patterned photoresist layer comprises a first photoresist block and a second photoresist block, and a thickness of the first photoresist block is thinner than a thickness of the second photoresist block;
removing partially a surface of the substrate with the first patterned photoresist layer as a mask to form a first patterned substrate;
reducing a thickness of the first patterned photoresist layer until the first photoresist block is removed completely, wherein the remaining second photoresist block partially exposes the first patterned substrate;
removing partially the first patterned substrate with the remaining second photoresist block as a mask to form a second patterned substrate; and
forming a semiconductor device layer including a first type semiconductor material layer, a light emitting layer and a second type semiconductor material layer, a current spreading layer and a plurality of electrodes sequentially on the second patterned substrate, wherein the plurality of electrodes are electrically connected with the semiconductor device layer and the current spreading layer.
2. The method for fabricating the light emitting diode chip as claimed in claim 1 , wherein the step of forming the first patterned photoresist layer comprises performing a half-tone mask process, a gray-tone mask process or a multi-tone mask process.