A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diffusion layer. A method of producing the photodiode includes the steps of: forming an insulation material layer on the silicon semiconductor layer after the P-type impurity and the N-type impurity are implanted into the low concentration diffusion layer, the P-type high concentration diffusion layer, and the N-type high concentration diffusion layer; forming an opening portion in the insulation material layer in an area for forming the low concentration diffusion layer; and etching the silicon semiconductor layer in the area for forming the low concentration diffusion layer so that a thickness of the silicon semiconductor layer is reduced to a specific level.
1. A photodiode comprising:
a photosensitive element formed in a silicon semiconductor layer on an insulation layer,
wherein said photosensitive element includes:
a low concentration diffusion layer with one of a P-type impurity and an N-type impurity diffused therein at a low concentration;
a P-type high concentration diffusion layer with the P-type impurity diffused therein at a first high concentration;
an N-type high concentration diffusion layer with the N-type impurity diffused therein at a second high concentration, said P-type high concentration diffusion layer being arranged to face the N-type high concentration diffusion layer with the low concentration diffusion layer in between; and
an insulation material layer with transparency formed on the silicon semiconductor layer, said insulation material layer having an opening portion in an area for forming the low concentration diffusion layer,
wherein said silicon semiconductor layer has a thin thickness portion in the area for forming the low concentration diffusion layer.
2. The photodiode according to claim 1 , further comprising a first photosensitive element and a second photosensitive element, wherein said first photosensitive element includes a first low concentration diffusion layer having the silicon semiconductor layer with a first thickness at a specific level, and said second photosensitive element includes a second low concentration diffusion layer having the silicon semiconductor layer with a second thickness smaller than the specific level.
3. The photodiode according to claim 2 , wherein said first low concentration diffusion layer includes the silicon semiconductor layer with the first thickness within a range between 3 nm and 36 nm, and said second low concentration diffusion layer includes the silicon semiconductor layer with the second thickness within a range between 3 nm and 36 nm.