Laser mask and crystallization method using the same

1. A method for fabricating a display device comprising:

forming a plurality of gate lines and data lines on a substrate, the gate and data lines crossing each other to define pixels; and

forming a thin film transistor (TFT) near each crossing in the pixel including:

providing a substrate having a silicon thin film,

positioning a laser mask having first to fourth blocks on the substrate, each block having a periodic pattern including a plurality of transmitting regions and a blocking region,

wherein the laser mask includes a first mask pattern in the first block, a second mask pattern in the second block, a third mask pattern in the third block and a fourth mask pattern in the fourth block, each first to fourth blocks having a periodic pattern including a plurality of transmitting regions and a blocking region and

wherein the first mask pattern with a position ‘A’, the second mask pattern with a position of ‘B’, the third mask pattern with a position of ‘C’ and the fourth mask pattern with a position of ‘D’ are formed in the first to fourth blocks, respectively, and the positions ‘A’ to ‘D’ are different from each other; and

crystallizing the silicon thin film by irradiating a laser beam through the laser mask.

2. The method of claim 1 , wherein when the first to fourth mask patterns are projected in one block, the centers of the four adjacent transmitting regions form one equilateral rectangle.

3. The method of claim 2 , wherein with respect to the first mask pattern in the first block, the second mask pattern is shifted downward as much as the length of one side of the equilateral rectangle, the third mask pattern in the third block is shifted rightward as much as the length of one side of the equilateral rectangle, and the fourth mask pattern in the fourth block is shifted rightward and downward as much as the length of one side of the equilateral rectangle.

4. The method of claim 1 , wherein the irradiated laser has an energy density of a complete melting region.

5. The method of claim 1 , wherein the crystallization is a sequential lateral solidification (SLS).

6. The method of claim 1 , wherein the crystallized silicon thin film is substantially free from a shot mark.

7. The method of claim 1 , wherein crystallizing the silicon thin film by irradiating a laser beam through the laser mask further comprises:

crystallizing the silicon film by a four-shot method, the four shot method further including:

irradiating a first laser on a certain region of the silicon thin film through the laser mask,

moving the laser mask or a stage having the substrate in a direction of an X axis and irradiating a second laser through the laser mask,

moving the laser mask or the stage in the direction of the X axis and irradiating a third laser through the laser mask,

moving the laser mask or the stage in the direction of the X axis and irradiating a fourth laser through the laser mask;

repeatedly performing crystallization of the silicon thin film by the four-shot method in the direction of the X axis; and

moving the laser mask or the stage in a direction of a Y axis and repeatedly performing the four-shot method in the direction of −X axis using the laser mask.

8. The method of claim 7 , wherein the laser mask or the stage is moved by about a distance equal to a size of one block.

9. The method of claim 7 , wherein a movement distance of the laser mask or the stage is determined in order to remove an X-overlap or a Y-overlap.

10. The method of claim 1 , wherein the transmitting regions have a circular shape.

11. The method of claim 1 , wherein the transmitting regions have a shape of an equilateral polygon, the polygon including an equilateral triangle, an equilateral rectangle, hexagon and octagon.

12. The method of claim 11 , wherein a distance between the centers of the transmitting regions is L, a radius of the transmitting regions is R, and L and R have a relationship of

L

2

⁢

2

≤

R

<

L

2

.

13. The method of claim 1 , wherein the transmitting regions in each block are arranged in an N columns×M rows matrix configuration (each of N and M is an integer).