Amorphous oxide semiconductor thin film transistor fabrication method
This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source region, a drain region, and a channel region between the source region and the drain region is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel region, and a first metal layer on the dielectric layer. A second metal layer is formed on the oxide semiconductor layer overlying the source region and the drain region. The oxide semiconductor layer and the second metal layer are treated to form a heavily doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source region and the drain region. An oxide in the second metal layer also can be formed.
1. An apparatus comprising a thin film transistor (TFT), the TFT comprising:
a substrate including a surface;
an oxide semiconductor layer disposed over the substrate surface, a channel region of the oxide semiconductor layer being between a source region and a drain region of the oxide semiconductor layer, the source region and the drain region of the oxide semiconductor layer being a heavily doped n-type oxide semiconductor;
a gate dielectric on the channel region of the oxide semiconductor layer;
a gate metal on the gate dielectric, wherein the gate metal defines the channel region of the oxide semiconductor layer;
a source metal oxide on the source region and a drain metal oxide on the drain region of the oxide semiconductor layer, wherein the source metal oxide defines the source region and the drain metal oxide defines the drain region of the oxide semiconductor layer;
a passivation dielectric on the gate metal and on the source metal oxide and the drain metal oxide;
a first metal contact extending through the source metal oxide and contacting the source region of the oxide semiconductor layer; and
a second metal contact extending through the drain metal oxide and contacting the drain region of the oxide semiconductor layer.
2. The apparatus of claim 1 , further comprising:
a buffer layer dielectric on the substrate surface, wherein the oxide semiconductor layer is on the buffer layer dielectric.
3. The apparatus of claim 1 , wherein the substrate includes a glass.
4. The apparatus of claim 1 , further comprising:
a base metal oxide underlying the source region and the drain region of the oxide semiconductor layer.
5. The apparatus of claim 1 , further comprising:
a display including an array of display elements, at least one display element connected to the TFT;
a processor that is configured to communicate with the display, the processor being configured to process image data; and
a memory device that is configured to communicate with the processor.
6. The apparatus of claim 5 , further comprising:
a driver circuit configured to send at least one signal to the TFT.
7. The apparatus of claim 6 , further comprising:
a controller configured to send at least a portion of the image data to the driver circuit.
8. The apparatus of claim 5 , further comprising:
an image source module configured to send the image data to the processor.
9. The apparatus of claim 8 , wherein the image source module includes at least one of a receiver, transceiver, and transmitter.
10. The apparatus of claim 5 , further comprising:
an input device configured to receive input data and to communicate the input data to the processor.
11. The apparatus of claim 1 , further comprising:
dielectric sidewalls on sides of the gate dielectric and the gate metal and disposed over a portion of the oxide semiconductor layer.
12. A thin film transistor (TFT) device comprising:
a substrate including a surface;
an oxide semiconductor layer disposed over the substrate surface, a channel region of the oxide semiconductor layer being between a source region and a drain region of the oxide semiconductor layer, the source region and the drain region of the oxide semiconductor layer being a heavily doped n-type oxide semiconductor;
a gate dielectric on the channel region of the oxide semiconductor layer;
a gate metal on the gate dielectric, wherein the gate metal defines the channel region of the oxide semiconductor layer;
source means for removing oxygen from the oxide semiconductor layer on the source region of the oxide semiconductor layer, wherein the source removing means defines the source region;
drain means for removing oxygen from the oxide semiconductor layer on the drain region of the oxide semiconductor layer, wherein the drain removing means defines the drain region of the oxide semiconductor layer;
a passivation dielectric on the gate metal and on the source removing means and the drain removing means;
a first metal contact extending through the source removing means and contacting the source region of the oxide semiconductor layer; and
a second metal contact extending through the drain removing means and contacting the drain region of the oxide semiconductor layer.
13. The TFT device of claim 12 , further comprising:
a base means for removing oxygen from the oxide semiconductor layer underlying the source region and the drain region of the oxide semiconductor layer.
14. The TFT device of claim 12 , further comprising:
dielectric sidewalls on sides of the gate dielectric and the gate metal and disposed over a portion of the oxide semiconductor layer.