CLEANING METHOD OF APPARATUS FOR DEPOSITING CARBON CONTAINING FILM
A dry cleaning method of an apparatus for depositing a carbon-containing film is provided. The method includes in-situ cleaning an inside of a reactor of the apparatus, wherein the cleaning of the inside of the reactor of the apparatus comprises supplying a cleaning gas including halogens with being activated by using a remote plasma generator to the reactor and simultaneously supplying a carbon-removing gas without being activated to the reactor. In the method, a by-product in a solid form is not generated, and in-situ cleaning can be performed without stopping the apparatus for depositing a carbon-containing film after a predetermined amount of wafers are treated, such that productivity of the apparatus for depositing a carbon-containing film can be maximized.
1 . A dry cleaning method of an apparatus for depositing a carbon-containing film, the method comprising cleaning an inside of a reactor of the apparatus, wherein the cleaning of the inside of the reactor of the apparatus comprises supplying a cleaning gas including halogens with being activated by using a remote plasma generator to the reactor and simultaneously supplying a carbon-removing gas without being activated to the reactor.
2 . The method of claim 1 , wherein the cleaning gas is one selected from the group consisting of NF 3 , C 2 F 6 , CF 4 , CHF 3 , and F 2 and a combination thereof.
3 . The method of claim 1 , wherein the carbon-removing gas is a gas including oxygen (O) or hydrogen (H).
4 . The method of claim 1 , wherein the carbon-removing gas is one selected from the group consisting of O 2 , N 2 O, O 3 , NH 3 , and H 2 and a combination thereof.
5 . The method of claim 1 , further comprising, before the supplying of the cleaning gas and the carbon-removing gas, performing O 2 treatment so as to primarily remove carbon that exists on the surface of a by-product inside the reactor.
6 . The method of claim 1 , further comprising, after the cleaning of the inside of the reactor, treating the apparatus for depositing a carbon-containing film by using a hydrogen-containing gas so as to remove a residual of the cleaning gas.
7 . The method of claim 6 , wherein the hydrogen-containing gas is one selected from the group consisting of H 2 , NH 3 , SiH 4 , and H 2 O and a combination thereof.
8 . The method of claim 1 , further comprising, after the cleaning of the inside of the reactor, seasoning an inside of the reactor by using the carbon-containing film.