Polymeric compositions comprising per(phenylethynyl) arene derivatives
View Patent ↗A polymeric composition comprising a first polymer chosen from a poly(arylene ether) polymer including polymer repeat units of the following structure: —(O—Ar 1 —O—Ar 2 —O—) m —(—O—Ar 3 —O—Ar 4 —O)n- where Ar 1 , Ar 2 , Ar 3 , and Ar 4 are identical or different aryl radicals, m is 0 to 1, n is 1 m; a polysulfone, a polyimide, a poly(etherketone), a polyurea, a polyurethane, and combinations thereof and a second polymer comprising a per(phenylethynyl) arene polymer derivative. Cured films containing the polymer can exhibit at least one of the following properties: Tg from 160° C. to 180° C., a dielectric constant below 2.7 with frequency independence, and a maximum moisture absorption of less than 0.17 wt %. Accordingly, the polymer is especially useful, for example, in interlayer dielectrics and in die-attach adhesives.
1. A composition comprising:
a first polymer chosen from a poly(arylene ether) polymer including polymer repeat units of the following structure:
—(O—Ar 1 —O—Ar 2 —O—) m —(—O—Ar 3 —O—Ar 4 —O) n —
where Ar 1 , Ar 2 , Ar 3 , and Ar 4 are identical or different aryl radicals, m is 0 to 1, n is 1−m; a polysulfone; a polyimide; a polyamide; a poly(etherketone); a polyurea; a polyurethane; and combinations thereof; and
a second polymer comprising a per(phenylethynyl)arene polymer derivative.
2. The composition of claim 1 , wherein the aryl radicals are independently selected from the group consisting of:
3. A polymer composition comprising:
a first polymer chosen from a polymer poly(arylene ether) polymer having a graft which graft can be thermally induced to crosslink the polymer, wherein said polymer having said graft has the structure:
wherein m=0 to 1.0; and n=1.0−m; and Ar 1 , Ar 2 , Ar 3 and Ar 4 are individually arylene radicals, and G 1-8 are individually: H,
or mixtures thereof, wherein Z is the average number of G radicals which are I or II per repeating unit of said polymer and Z is in the range of 0.1 to 4.0, where R 1 , R 2 , R 3 and R 4 are individually H or alkoxy radical, wherein the alkoxy radical can have a normal or branched alkyl radical of C 1-8 , and further wherein said poly(arylene ether) polymer consists essentially of non-functional repeating units wherein Ar 1 , Ar 2 , Ar 3 and Ar 4 are individually arylene radicals selected from the group consisting of;
and mixtures thereof, but Ar 1 and Ar 2 or Ar 3 and Ar 4 , other than the diradical 9,9-diphenylfluorene, are not isomeric equivalents; a polysulfone; a polyimide; a polyamide; a poly(etherketone); a polyurea; a polyurethane; and combinations thereof; and
a second polymer comprising a per(phenylethynyl)arene polymer derivative.
4. The composition of claim 3 wherein the grafted polymer has repeating units of a structure:
wherein G 1-8 are as defined above; m=0 to 1.0; and n=1.0−m; and Ar 2 and Ar 4 are individually arylene radicals selected from the group consisting of;
and mixtures thereof.
5. The composition of claim 4 wherein the grafted polymer comprises a repeating polymer unit:
wherein grafts G 1-4 are individually selected from the group consisting of: H,
and mixtures thereof, where Z is the average number of G radicals per polymer unit and Z is in the range of 0.1 to 4.0.
6. The composition of claim 3 wherein the grafted polymer has a repeating polymer unit:
wherein G 1-4 are individually H or:
where Z is the average number of G radicals per polymer unit and Z is in the range of 0.1 to 4.0.
7. The composition of claim 6 wherein Z is in the range of 0.25 to 1.5.
8. The composition of claim 7 wherein Z is approximately 0.9.
9. The composition of claim 3 wherein said composition is crosslinked and comprises a dielectric material on a microelectronic device.
10. The composition of claim 9 wherein said dielectric material is provided adjacent conductive regions of an integrated circuit.
11. The composition of claim 3 wherein said polymer and said graft are crosslinked.