IP Library Granted Patent US 8,980,742
Granted Patent B2
US 8,980,742 · App. 13/060,404 · Granted Mar 17, 2015

Method of manufacturing multi-level metal thin film and apparatus for manufacturing the same

Inventors: Jung Wook Lee (Hwaseong-si, KR); Young Hoon Park (Anseong-si, KR)
Assignee: Wonik IPS Co., Ltd.
H01L21/28556C23C8/24C23C16/06C23C16/56C23C28/322C23C28/34
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Quick Facts
Patent No.
US 8,980,742
App. No.
13/060,404
Granted
Mar 17, 2015
Kind
B2
Abstract

Provided are methods and apparatuses for manufacturing a multilayer metal thin film without additional heat treatment processes. The method of manufacturing a multilayer metal thin film including steps of: (a) forming a first metal layer on a substrate by flowing a first metal precursor into a first reaction container; and (b) forming a second metal layer on the first metal layer by flowing a second metal precursor into a second reaction container, wherein the step (b) is performed in a range of a heat treatment temperature of the first metal layer so that the second metal layer is formed as the first metal layer is heat-treated.

Claims (8)

1. A method of manufacturing a multilayer metal thin film, comprising steps of:

(a) forming a cobalt (Co) layer on a substrate by flowing a cobalt (Co) precursor into a first reaction container; and,

(b) forming a titanium (Ti) layer on the cobalt (Co) layer by flowing a titanium (Ti) precursor into a second reaction container without prior heat treatment of the cobalt (Co) layer,

wherein forming the titanium (Ti) layer and a heat treatment of the cobalt (Co) layer to remove carbon included in the cobalt (Co) layer are simultaneously performed at a temperature between 450° C. and 550° C.

2. The method of claim 1 , further comprising a step (c) of nitrating a surface of the titanium (Ti) layer in the second reaction container.

3. The method of claim 2 , wherein in the step (b), plasma processing is further performed on the cobalt (Co) layer by applying plasma to the second reaction container.

4. The method of claim 3 , wherein the plasma is based on a gas including hydrogen.

5. The method of claim 4 , wherein the gas including hydrogen is hydrogen (H 2 ) or ammonia (NH 3 ).

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2016
From: WONIK IPS CO., LTD.
To: WONIK IPS CO., LTD.
Reel/Frame 038523/0270 →
CHANGE OF NAME Recorded Nov 15, 2011
From: ATTO CO., LTD.
To: WONIK IPS CO., LTD.
Reel/Frame 027231/0896 →
MERGER Recorded Nov 13, 2011
From: INTEGRATED PROCESS SYSTEMS LTD.
To: ATTO CO., LTD.
Reel/Frame 027218/0394 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 23, 2011
From: LEE, JUNG WOOK; PARK, YOUNG HOON
To: INTEGRATED PROCESS SYSTEMS LTD.
Reel/Frame 025853/0020 →
Continuity (1)
Related Publication 20110151664A1 · Jun 23, 2011