Semiconductor device
Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
1. A radio frequency (RF) power module for multiple frequency bands, the RF power module comprising:
a module board; and
a semiconductor chip mounted over the module board, the semiconductor chip comprising:
a first amplifier circuit for a first frequency band, the first amplifier circuit including a first amplifying stage, a second amplifying stage, and a third amplifying stage electrically coupled in series; and
a second amplifier circuit for a second frequency band of a frequency that is different a frequency of the first frequency band, the second amplifier circuit including a first amplifying stage, a second amplifying stage, and a third amplifying stage electrically coupled in series.
2. The RF power module according to claim 1 , wherein the semiconductor chip further comprises a control circuit controlling the first amplifier circuit and the second amplifier circuit.
3. The RF power module according to claim 2 , wherein the semiconductor chip includes a plurality of metal oxide semiconductor field effect transistors (MOSFETs).
4. The RF power module according to claim 2 , wherein the first and second amplifier circuits are each comprised of a MOSFET.
5. The RF power module according to claim 2 , wherein the multiple frequency bands of the RF power module include the first frequency band, the second frequency band, and a third frequency band of a frequency that is different than frequencies of the first and second frequency bands.
6. The RF power module according to claim 2 , wherein the multiple frequency bands of the RF power module include the first frequency band and the second frequency band.
7. The RF power module according to claim 6 , wherein the semiconductor chip further comprises a first output terminal for the third amplifying stage of first amplifier circuit and a second output terminal for the third amplifying stage of the second amplifier circuit.
8. The RF power module according to claim 7 , wherein the first output terminal is electrically coupled to a transmission line over a main surface of the module board via first bonding wires, and wherein the second output terminal electrically coupled to a transmission line over the main surface of the module board via second bonding wires.
9. A radio frequency (RF) power module for multiple frequency bands, the RF power module comprising:
a module board; and
a semiconductor chip mounted over the module board, the semiconductor chip comprising:
a first amplifier circuit for a first frequency band, the first amplifier circuit including a first amplifying stage and a second amplifying stage electrically coupled in series;
a second amplifier circuit for a second frequency band of a frequency that is different a frequency of the first frequency band, the second amplifier circuit including a first amplifying stage and a second amplifying stage electrically coupled in series; and
a control circuit controlling the first amplifier circuit and the second amplifier circuit, and
wherein a third amplifying stage of the first amplifier circuit is electrically coupled to the second amplifying stage of the first amplifier circuit, and
wherein a third amplifying stage of the second amplifier circuit is electrically coupled to the second amplifying stage of the second amplifier circuit.
10. The RF power module according to claim 9 , wherein the first and second amplifying stages of the first amplifier circuit are each comprised of a metal oxide semiconductor field effect transistor (MOSFET), and wherein the first and second amplifying stages of the second amplifier are each comprised of a MOSFET.
11. The RF power module according to claim 10 , wherein the multiple frequency bands of the RF power module include the first frequency band and the second frequency band.
12. The RF power module according to claim 11 , wherein the semiconductor chip comprises the third amplifying stage of the first amplifier circuit and the third amplifying stage of the second amplifier circuit.