Method of exposing a semiconductor wafer and exposure apparatus

1. An exposure method comprising:

performing an autofocus scan process to detect a defocused portion of a first resist film over a semiconductor wafer and to generate a detection signal that indicates the defocused portion detected; and

performing a first exposure scan process while selectively blinding the first resist film, with reference to the detection signal.

2. The exposure method according to claim 1 , wherein selectively blinding the first resist film comprises selectively blinding the defocused portion.

3. The exposure method according to claim 1 , wherein selectively blinding the first resist film comprises selectively blinding other portion of the resist film than the defocused portion.

4. The exposure method according to claim 1 , wherein performing the autofocus scan process comprises:

illuminating exposure beams of light on the first resist film at a scanning pitch of at most 1 mm.

5. The exposure method according to claim 1 , wherein performing the autofocus scan process comprises:

measuring height-direction positions on a surface of the first resist film; and

performing a three-dimensional analysis of information of the height-direction positions to detect the defocused portion.

6. The exposure method according to claim 5 , wherein performing the first exposure scan process comprises:

moving at least a blinding plate to extend across an exposure slit and to blind the defocused portion, with reference to the detection signal.

7. The exposure method according to claim 6 , wherein performing the first exposure scan process further comprises:

storing an identification information identifying the semiconductor wafer and the information of the height-direction positions, and

wherein the at least one of blinding plates is moved with reference to the identification information and the information of the height-direction positions.

8. The exposure method according to claim 7 , further comprising:

removing the first resist film from the semiconductor wafer;

forming a second resist film over the semiconductor wafer; and

performing a second exposure scan process for the second resist film while moving a same at least one of blinding plates as the at least one of blinding plates moved in the first exposure scan process, and to blind a same position of the second resist film as the position blinded in the first exposure scan process, with reference to the identification information and the information of the height-direction positions.

9. The exposure method according to claim 1 , further comprising:

removing the first resist film from the semiconductor wafer;

forming a second resist film over the semiconductor wafer; and

performing a second exposure scan process for the second resist film while blinding a same position of the second resist film as the position blinded in the first exposure scan process with reference to the detection signal.

10. The exposure method according to claim 1 , wherein performing the autofocus scanning process comprises:

measuring height-direction positions on a surface of the first resist film, and

detecting the defocused portion with reference to information related to the height-direction positions measured.

11. The exposure method according to claim 10 , wherein performing the autofocus scanning process further comprises:

calculating differences between measured heights and an adjustable height to identify the differences as calculated defocus values, the measured heights being respectively defined by the height-direction positions measured;

comparing the calculated defocus values to a reference defocus value at positions on the surface of the first resist film; and

identifying the defocused portion at a position where the calculated defocus value exceeds the reference defocus value.

12. The exposure method according to claim 10 , wherein performing the autofocus scanning process further comprises:

performing an additional autofocus scanning process which is the same as the autofocus scanning process;

determining that the defocused portion is present at the same position as the position where the defocused portion was identified, if the defocused portion is identified at the same position when performing the additional autofocus scanning process; and

determining that the defocused portion is absent at the same position as the position where the defocused portion was identified, if the defocused portion is not identified at the same position when performing the additional autofocus scanning process.

13. The exposure method according to claim 10 , wherein performing the autofocus scanning process further comprises:

detecting heights and inclinations of the surface of the first resist film from the height-direction positions measured; and

detecting the defocused portion with reference to the heights and the inclinations detected.

14. The exposure method according to claim 13 , wherein detecting the defocused portion with reference to the heights and the inclinations detected comprises:

calculating high and inclination baselines from the height-direction positions measured;

determining whether a focused plane is offset from a base-plane which is made by the high and inclination baselines; and

determining whether the focused plane has a three-dimensionally upwardly bulging shape.

15. An exposure method comprising:

measuring height-direction positions on a surface of a first resist film over a semiconductor wafer;

calculating differences between measured heights and an adjustable height to identify the differences as calculated defocus values, the measured heights being respectively defined by the height-direction positions measured;

comparing the calculated defocus values to a reference defocus value at positions on the surface of the first resist film;

identifying the defocused portion at a position where the calculated defocus value exceeds the reference defocus value;

generating a detection signal that indicates the defocused portion detected; and

performing a first exposure scan process while blinding the defocused portion, with reference to the detection signal.

16. The exposure method according to claim 15 , wherein performing the first exposure scan process comprises:

moving at least a blinding plate to extend across an exposure slit and to blind the defocused portion, with reference to the detection signal.

17. The exposure method according to claim 16 , wherein performing the first exposure scan process further comprises:

storing an identification information identifying the semiconductor wafer and the information of the height-direction positions, and

wherein the at least one of blinding plates is moved with reference to the identification information and the information of the height-direction positions.

18. An exposure method comprising:

measuring height-direction positions on a surface of a first resist film over a semiconductor wafer;

detecting a defocused portion with reference to information related to the height-direction positions measured; and

performing a first exposure scan process while blinding the defocused portion, with reference to the detection signal.

19. The exposure method according to claim 18 , further comprising:

detecting heights and inclinations of the surface of the first resist film from the height-direction positions measured; and

wherein the detecting the defocused portion comprises detecting the defocused portion with reference to the heights and the inclinations detected.

20. The exposure method according to claim 19 , wherein detecting the defocused portion with reference to the heights and the inclinations detected comprises:

calculating high and inclination baselines from the height-direction positions measured;

determining whether a focused plane is offset from a base-plane which is made by the high and inclination baselines; and

determining whether the focused plane has a three-dimensionally upwardly bulging shape.