Solid state optoelectronic device with plated support substrate
A vertical solid state lighting (SSL) device is disclosed. In one embodiment, the SSL device includes a light emitting structure formed on a growth substrate. Individual SSL devices can include a embedded contact formed on the light emitting structure and a metal substrate plated at a side at least proximate to the embedded contact. The plated substrate has a sufficient thickness to support the light emitting structure without bowing.
1. A method of manufacturing solid state lighting devices, comprising:
forming a light emitting structure on a circular growth substrate, wherein the growth substrate and the light emitting structure are at least six inches in diameter, wherein the light emitting structure has a first face facing the growth substrate and a second face facing away from the growth substrate;
forming an embedded contact having a first side in physical contact and electrically coupled to the second face of the light emitting structure, the embedded contact having a second side opposite the first side;
etching a plurality of v-shaped trenches through the embedded contact and into the light emitting structure, wherein the trenches separate the light emitting structure into individual mesas;
lining entire surface of each of the plurality of the individual trenches with a dielectric liner, wherein the dielectric liner ends at the second side of the embedded contact;
forming a plated substrate on the individual mesas at the second side of the embedded contact and filling the trenches, wherein a first side of the plated substrate faces toward the mesas and a second side opposite the first side faces away from the mesas;
attaching a carrier to the second side of the plated substrate;
removing the growth substrate from the light emitting structure; and
forming exterior contacts at the first face of the light emitting structure.
2. The method of claim 1 , further comprising:
forming a barrier on the embedded contact, wherein etching the plurality of v-shaped trenches comprises forming V-shaped trenches through the light emitting structure, the embedded contact, and the barrier.
3. The method of claim 1 wherein etching the plurality of trenches comprises etching through the light emitting structure to expose a portion of the growth substrate.
4. The method of claim 1 wherein etching the plurality of trenches in the light emitting structure comprises using a wet etch that penetrates to the growth substrate.