Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials
View Patent ↗A method for fabricating an electronic device, comprising wafer bonding a first semiconductor material to a III-nitride semiconductor, at a temperature below 550° C., to form a device quality heterojunction between the first semiconductor material and the III-nitride semiconductor, wherein the first semiconductor material is different from the III-nitride semiconductor and is selected for superior properties, or preferred integration or fabrication characteristics in the injector region as compared to the III-nitride semiconductor.
1. An electronic device, comprising:
a semiconductor material including an injector region;
a III-nitride material including a collector region or a drain region; and
a heterojunction formed between the semiconductor material and the III-nitride material, wherein the semiconductor material is not a III-nitride;
wherein the semiconductor material comprises a material stack including a Si layer and a SiGe layer and the SiGe layer is between the Si layer and the III-nitride material.
2. The device of claim 1 , wherein the III-nitride material is doped n-type.
3. The device of claim 1 wherein the device is a bipolar transistor.
4. The device of claim 1 , further comprising a bonded interface between the semiconductor material and the III-nitride material.
5. The device of claim 1 , wherein the semiconductor material has a different lattice constant, thermal properties, and crystalline structure as compared to the III-nitride material.
6. The device of claim 1 , wherein the device is a field effect transistor.
7. An electronic device, comprising:
a semiconductor material including an injector region;
a III-nitride material including a collector region or a drain region; and
a heterojunction formed between the semiconductor material and the III-nitride material,
wherein the semiconductor material is not a III-nitride and the semiconductor material includes a structure comprising n + -type Silicon (Si), p-type Si, and n-type Si and the n-type Si is adjacent to the III-nitride material.
8. The device of claim 7 , wherein the device is a field effect transistor.
9. A device, comprising:
a semiconductor material including an injector region;
a III-nitride material including a collector region or a drain region; and
a heterojunction formed between the semiconductor material and the III-nitride material, wherein the semiconductor material is not a III-nitride; and
an intermediate material region between the semiconductor material and the III-nitride material, the intermediate material region being selected from the group consisting of In, InP, a III-P compound, and a III-As compound.
10. The device of claim 9 , wherein the semiconductor material comprises a material stack including a Si layer and a SiGe layer.
11. The device of claim 10 , wherein the SiGe layer is between the Si layer and the III-nitride material.
12. The device of claim 10 , wherein the III-nitride material is doped n-type.
13. The device of claim 10 , wherein the device is a bipolar transistor.
14. The device of claim 9 , wherein the semiconductor material comprises silicon (Si).
15. The device of claim 9 , wherein the semiconductor material includes a structure comprising n + -type Silicon (Si), p-type Si, and n-type Si.
16. The device of claim 15 , wherein the n-type Si is adjacent to the III-nitride material.
17. The device of claim 9 , wherein the device is a field effect transistor.
18. The device of claim 9 , further comprising a bonded interface between the semiconductor material and the III-nitride material.
19. The device of claim 9 , wherein the semiconductor material has a different lattice constant as compared to the III-nitride material.
20. The device of claim 9 , wherein the semiconductor material has a different crystalline structure as compared to the III-nitride material.
21. The device of claim 9 , wherein the semiconductor material has different thermal properties as compared to the III-nitride material.