TRANSISTOR STRUCTURE AND MANUFACTURING METHOD WHICH HAS CHANNEL EPITAXIAL EQUIPPED WITH LATERAL EPITAXIAL STRUCTURE
A semiconductor device and methods of fabricating semiconductor devices are provided. Provided is an epitaxial layer equipped with a lateral epitaxial layer that can block a Shallow Trench Isolation (STI) edge from a downstream etching process step, which can result in a reduced STI divot. A method involves forming a semiconductor substrate on a source region and a drain region and forming a semiconductor region on the semiconductor substrate. The method also comprises creating at least a first isolation feature adjacent to the semiconductor region and depositing an epitaxial layer on the semiconductor region and laterally between the semiconductor region and the at least the first isolation feature.
1 . A semiconductor device, comprising:
a transistor region comprising:
a semiconductor region formed on a substrate;
an isolation feature adjacent to the semiconductor region; and
an epitaxial layer equipped with a lateral epitaxial layer, wherein the epitaxial layer is grown on the semiconductor region and laterally between the semiconductor region and the isolation feature.
2 . The semiconductor device of claim 1 , the epitaxial layer is grown laterally to protect a shallow trench isolation edge from an etching process.
3 . The semiconductor device of claim 1 , wherein the epitaxial layer is grown laterally at a bottom of a gate electrode.
4 . The semiconductor device of claim 1 , wherein the epitaxial layer is grown in a drain region.
5 . The semiconductor device of claim 1 , wherein the epitaxial layer is grown at a bottom of a gate electrode and on a source region and a drain region, wherein the epitaxial layer is removed from at least one of the gate electrode, the source region, and the drain region.
6 . The semiconductor device of claim 1 , wherein the epitaxial layer comprises a lengthwise film thickness, M 1 , and a cross direction film thickness, M 2 , wherein the lengthwise film thickness, M 1 , is thicker than the cross direction film thickness, M 2 .
7 . The semiconductor device of claim 1 , wherein the isolation feature is formed by shallow trench isolation, where a divot is created during the shallow trench isolation, and wherein the lateral epitaxial layer restricts a height of the divot.
8 . The semiconductor device of claim 1 , wherein the epitaxial layer is formed with a laminating structure of monolayer to mitigate formation of an STI divot during wet process etching for dual gate oxide formation.
9 . The semiconductor device of claim 1 , wherein the epitaxial layer is formed with Silicon-Germanium (SiGe), Silicon (Si), or a combination thereof.
10 . A semiconductor device, comprising:
at least one isolation region formed by shallow trench isolation;
a channel region;
a channel epitaxial layer formed on the channel region; and
a lateral epitaxial layer formed between the at least one isolation region and the channel region.
11 . The semiconductor device of claim 10 , wherein the lateral epitaxial layer is formed laterally between the at least one isolation region and the channel region to restrict formation of a divot.
12 . The semiconductor device of claim 10 , wherein a height of a divot is restricted.
13 . The semiconductor device of claim 10 , wherein an edge of the at least one isolation region is protected from a downstream processing step performed on the channel epitaxial layer.
14 . The semiconductor device of claim 10 , wherein the lateral epitaxial layer is grown laterally at a bottom of a gate electrode.
15 . A method for fabricating a semiconductor device, comprising:
forming a semiconductor substrate on a source region and a drain region;
forming a semiconductor region on the semiconductor substrate;
creating at least a first isolation feature adjacent to the semiconductor region; and
depositing an epitaxial layer on the semiconductor region and laterally between the semiconductor region and the at least the first isolation feature.
16 . The method of claim 15 , wherein the creating the at least the first isolation feature comprises:
performing shallow trench isolation; and
restricting a height of a divot created during the performing shallow trench isolation.
17 . The method of claim 15 , wherein the depositing comprises depositing the epitaxial layer laterally at a bottom of a gate electrode.
18 . The method of claim 15 , wherein the depositing comprises growing the epitaxial layer in the drain region.
19 . The method of claim 15 , wherein the depositing comprises:
growing the epitaxial layer at a bottom of a gate electrode and on the source region and the drain region; and
removing the epitaxial layer from at least one of the gate electrode, the source region, and the drain region.
20 . The method of claim 15 , wherein the depositing comprises forming the epitaxial layer with Silicon-Germanium (SiGe), Silicon (Si), or a combination thereof.