Microprobe, recording apparatus, and method of manufacturing microprobe
According to one embodiment, a microprobe includes a supporting base, an insulating layer, and an electrode layer arrayed in a first direction in this order. A principal surface of the microprobe is formed in a second direction different from the first direction. A step is formed on at least the electrode layer on the principal surface, and the electrode layer is partitioned into a first area and a second area by the step.
1. A microprobe for a probe based MEMS memory system, comprising a supporting base, an insulating layer and an electrode layer arranged in a first direction, the insulating layer sandwiched between the supporting base and the electrode layer, wherein a principal surface of the microprobe is formed in a second direction perpendicular to that of the first direction, and wherein a step is formed on at least the electrode layer on the principal surface, and the electrode layer is partitioned into a first area and a second area by the step, wherein a probe tip of said microprobe is configured to contact a recording medium of the MEMS memory system.
2. The microprobe according to claim 1 , wherein the electrode layer is formed from a material harder than materials of the supporting base and the insulating layer.
3. The microprobe according to claim 1 , wherein the insulating layer comprises a plurality of insulating layers and the electrode layer comprises a plurality of electrode layers.
4. The microprobe according to claim 1 , wherein one of the first area and the second area forms an end portion of the microprobe.
5. A recording apparatus for a probe based MEMS memory system comprising:
a microprobe comprising a supporting base, an insulating layer, and an electrode layer arrayed in a first direction in this order, wherein a principal surface of the microprobe is formed in a second direction perpendicular to that of the first direction, and wherein a step is formed on at least the electrode layer on the principal surface, and the electrode layer is partitioned into a first area and a second area by the step, a recording medium, wherein a probe tip of said microprobe contacts the recording medium of the probe-based MEMS memory system;
a first control unit configured to control a position of the recording medium relative to a position of the microprobe or control the position of the microprobe relative to the position of the recording medium; and
a second control unit configured to record information on the recording medium and reproduce information from the recording medium by using an electrical interaction between the electrode layer and the recording medium.
6. The apparatus according to claim 5 , wherein lengths of the step and
the second area in the second direction are set to: bring a first corner portion formed on the first area or the step into contact with the recording medium; and
not to bring a second corner portion formed on the second area into contact with the recording medium.
7. The apparatus according to claim 5 , wherein the first control unit controls relative positions of the recording medium and the microprobe to bring a first corner portion formed on the first area or the step into contact with the recording medium and not to bring a second corner portion formed on the second area into contact with the recording medium.
8. The recording apparatus according to claim 5 , wherein the electrode layer is formed from a material harder than materials of the supporting base and the insulating layer.
9. The recording apparatus according to claim 5 , wherein the insulating layer comprises a plurality of insulating layers and the electrode layer comprises a plurality of electrode layers.
10. The recording apparatus according to claim 5 , wherein one of the first area and the second area forms an end portion of the microprobe.
11. The apparatus according to claim 8 , wherein lengths of the step and the second area in the second direction are set to:
bring a first corner portion formed on the first area or the step into contact with the recording medium; and
not to bring a second corner portion formed on the second area into contact with the recording medium.
12. The apparatus according to claim 8 , wherein the first control unit controls relative positions of the recording medium and the microprobe to bring a first corner portion formed on the first area or the step into contact with the recording medium and not to bring a second corner portion formed on the second area into contact with the recording medium.
13. The apparatus according to claim 9 , wherein lengths of the step and the second area in the second direction are set to:
bring a first corner portion formed on the first area or the step into contact with the recording medium; and
not to bring a second corner portion formed on the second area into contact with the recording medium.
14. The apparatus according to claim 9 , wherein the first control unit controls relative positions of the recording medium and the microprobe to bring a first corner portion formed on the first area or the step into contact with the recording medium and not to bring a second corner portion formed on the second area into contact with the recording medium.
15. The apparatus according to claim 10 , wherein lengths of the step and the second area in the second direction are set to:
bring a first corner portion formed on the first area or the step into contact with the recording medium; and
not to bring a second corner portion formed on the second area into contact with the recording medium.
16. The apparatus according to claim 10 , wherein the first control unit controls relative positions of the recording medium and the microprobe to bring a first corner portion formed on the first area or the step into contact with the recording medium and not to bring a second corner portion formed on the second area into contact with the recording medium.
17. A method of manufacturing a microprobe of a probe-based MEMS memory system, the method comprising:
forming an insulating layer on the sidewall of a supporting base;
forming a step on a principal surface of the supporting base formed in a direction perpendicular to a direction in which the insulating layer is formed, so as to partition the principal surface into a first area and a second area; and
forming an electrode layer on at least the sidewall of the insulating layer by performing sputtering or vapor deposition from a rear side of the principal surface.
18. The method according to claim 17 , wherein after the electrode layer is formed, one of the first area and the second area is removed.