IP Library Granted Patent US 9,698,114
Granted Patent B2
US 9,698,114 · App. 13/071,841 · Granted Jul 4, 2017

Grid array connection device and method

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,698,114
App. No.
13/071,841
Granted
Jul 4, 2017
Kind
B2
Abstract

A method and device for input/output connections is provided. Devices and methods for connection structure are shown with improved mechanical properties such as hardness and abrasion resistance. Land grid array structures are provided that are less expensive to manufacture due to reductions in material cost such as gold. Ball grid array structures are provided with improved resistance to corrosion during fabrication. Ball grid array structures are also provided with improved mechanical properties resulting in improved shock testing results.

Claims (13)

1. A semiconductor chip grid array connection structure, comprising:

a metallic land grid array electrical connection surface;

a nickel layer coupled to the metallic connection surface;

a palladium containing layer coupled to a nickel layer; and

a gold layer coupled to the palladium containing layer.

2. The connection structure of claim 1 , wherein the palladium containing layer is substantially amorphous.

3. The connection structure of 1 , wherein the palladium containing layer thickness is approximately 100 nm.

4. The connection structure of claim 1 , wherein palladium containing layer is continuous to provide a corrosion barrier over the nickel layer.

5. The connection structure of claim 1 , gold layer is between 50 and 80 nm thick.

6. The connection structure of claim 1 , wherein the palladium containing layer includes palladium and phosphorous.

7. The connection structure of claim 1 , wherein the nickel layer includes nickel and phosphorous.

8. The connection structure of claim 1 , wherein the nickel layer is between 5 and 8 μm thick.

9. The connection structure of claim 1 , wherein the gold layer is less than 350 nm thick.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061175/0176 →