Semiconductor structure, manufacturing method of semiconductor structure and semiconductor device
View Patent ↗Disclosed is a semiconductor structure including a semiconductor substrate including an electronic circuit which is provided in a predetermined region of the semiconductor substrate, a wiring provided on the semiconductor substrate in a region outside of the predetermined region, an external connection electrode provided on the wiring, a sealing resin which covers a side surface of the external connection electrode and a wall which intervenes between the electronic circuit and the sealing resin.
1. A semiconductor structure, comprising:
a semiconductor substrate including an electronic circuit which is provided in a predetermined region of the semiconductor substrate;
a wiring provided on the semiconductor substrate in a region outside of the predetermined region;
an external connection electrode provided on the wiring;
a sealing resin which covers a side surface of the external connection electrode; and
a wall which intervenes between the electronic circuit and the sealing resin;
wherein the wall and the external connection electrode are formed of a same material.
2. The semiconductor structure according to claim 1 , wherein the predetermined region is encircled by the wall.
3. The semiconductor structure according to claim 1 , wherein an upper surface of the wall and an upper surface of the external connection electrode are at a same surface level.
4. The semiconductor structure according to claim 1 , wherein an upper surface of the sealing resin and an upper surface of the external connection electrode are at a same surface level.
5. The semiconductor structure according to claim 1 , wherein the wall is grounded.
6. The semiconductor structure according to claim 5 , wherein the semiconductor substrate includes a connection pad for grounding and the connection pad for grounding is connected to the wall via a wiring for grounding.
7. A semiconductor device, comprising:
a semiconductor structure which comprises:
a semiconductor substrate including an electronic circuit which is provided in a predetermined region of the semiconductor substrate;
a wiring provided on the semiconductor substrate outside of the predetermined region;
an external connection electrode provided on the wiring;
a sealing resin which covers a side surface of the external connection electrode; and
a wall which intervenes between the electronic circuit and the sealing resin,
an intermediate insulating layer provided around the semiconductor structure, and
a lower insulating layer which is in contact with an under surface of the intermediate insulating layer and an under surface of the semiconductor structure.
8. The semiconductor device according to claim 7 , further comprising an upper insulating layer on an upper surface of the intermediate insulating layer.
9. The semiconductor device according to claim 8 , wherein the upper insulating layer covers a region of the semiconductor structure excluding the predetermined region.
10. The semiconductor device according to claim 9 , wherein the upper insulating layer includes via holes, and a wiring which is connected to the external connection electrode via the via voles is provided on the upper insulating layer.
11. The semiconductor device according to claim 8 , wherein the upper insulating layer has an opening at a position corresponding to the predetermined region of the semiconductor structure.
12. The semiconductor device according to claim 7 , wherein a transparent resin is filled inside of the wall to seal the predetermined region.
13. The semiconductor device according to claim 7 , further comprising a lid arranged on the wall to seal an upper space of the predetermined region.
14. The semiconductor device according to claim 13 , wherein the lid is transparent.