Semiconductor device with two metal oxide films and an oxide semiconductor film
View Patent ↗An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.
1. A semiconductor device comprising:
an insulating film;
a first metal oxide film on and in contact with the insulating film;
an oxide semiconductor film in contact with the first metal oxide film;
source and drain electrodes in contact with the oxide semiconductor film;
a second metal oxide film in contact with the oxide semiconductor film;
a gate insulating film on and in contact with the second metal oxide film; and
a gate electrode over the gate insulating film.
2. The semiconductor device according to claim 1 , wherein the first metal oxide film and the second metal oxide film each contain a constituent element of the oxide semiconductor film.
3. The semiconductor device according to claim 1 , wherein the first metal oxide film and the second metal oxide film each have a larger energy gap than the oxide semiconductor film.
4. The semiconductor device according to claim 1 , wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film.
5. The semiconductor device according to claim 1 , wherein the first metal oxide film and the second metal oxide film each contain a gallium oxide.
6. The semiconductor device according to claim 1 , wherein a proportion of a constituent element of the first metal oxide film is equal to a proportion of a constituent element of the second metal oxide film.
7. The semiconductor device according to claim 1 , wherein the insulating film contains a silicon oxide.
8. The semiconductor device according to claim 1 , wherein the gate insulating film contains a silicon oxide or a hafnium oxide.
9. The semiconductor device according to claim 1 , wherein the second metal oxide film is provided so as to cover the source and drain electrodes and contact the first metal oxide film.
10. The semiconductor device according to claim 9 , wherein the oxide semiconductor film is surrounded by the first metal oxide film and the second metal oxide film.
11. The semiconductor device according to claim 1 , wherein side edges of the oxide semiconductor film in a channel length direction are aligned with side edges of the first metal oxide film in the channel length direction.
12. The semiconductor device according to claim 1 , wherein side edges of the oxide semiconductor film in a channel length direction are aligned with side edges of the second metal oxide film in the channel length direction.
13. The semiconductor device according to claim 1 , wherein a first insulating film is provided so as to cover the gate insulating film and the gate electrode.
14. The semiconductor device according to claim 1 , wherein a conductive film is provided below the oxide semiconductor film.
15. A semiconductor device comprising:
a first metal oxide film including gallium over a substrate;
an oxide semiconductor film over and in contact with the first metal oxide film;
source and drain electrodes over and in contact with the oxide semiconductor film;
a second metal oxide film including gallium over and in contact with the oxide semiconductor film and the source and drain electrodes;
a gate insulating film over and in contact with the second metal oxide film; and
a gate electrode over the gate insulating film.
16. The semiconductor device according to claim 15 ,
wherein the first metal oxide film and the second metal oxide film each have a larger energy gap than the oxide semiconductor film, and
wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film.
17. The semiconductor device according to claim 15 , wherein each of the first metal oxide film and the second metal oxide film is an i-type film.
18. A semiconductor device comprising:
a first metal oxide film including gallium over a substrate;
an oxide semiconductor film over and in contact with the first metal oxide film;
source and drain electrodes over and in contact with the oxide semiconductor film;
a second metal oxide film including gallium over and in contact with the oxide semiconductor film and the source and drain electrodes;
a gate insulating film over and in contact with the second metal oxide film; and
a gate electrode over the gate insulating film,
wherein the first metal oxide film and the second metal oxide film each contain a constituent element of the oxide semiconductor film.
19. The semiconductor device according to claim 18 ,
wherein the first metal oxide film and the second metal oxide film each have a larger energy gap than the oxide semiconductor film, and
wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film.
20. The semiconductor device according to claim 18 , wherein each of the first metal oxide film and the second metal oxide film is an i-type film.
21. A semiconductor device comprising:
a first metal oxide film including gallium over a substrate;
an oxide semiconductor film over and in contact with the first metal oxide film;
source and drain electrodes over and in contact with the oxide semiconductor film;
a second metal oxide film including gallium over and in contact with the oxide semiconductor film and the source and drain electrodes;
a gate insulating film over and in contact with the second metal oxide film; and
a gate electrode over the gate insulating film,
wherein the first metal oxide film and the second metal oxide film each contain a constituent element of the oxide semiconductor film,
wherein the second metal oxide film includes a depression portion between the source electrode and the drain electrode.
22. The semiconductor device according to claim 21 ,
wherein the first metal oxide film and the second metal oxide film each have a larger energy gap than the oxide semiconductor film, and
wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film.
23. The semiconductor device according to claim 21 , wherein each of the first metal oxide film and the second metal oxide film is an i-type film.
24. The semiconductor device according to claim 1 , wherein the oxide semiconductor film is provided over and in contact with the first metal oxide film,
wherein the source and drain electrodes are provided over the oxide semiconductor film, and
wherein the second metal oxide film is provided over and in contact with the oxide semiconductor film and the source and drain electrodes.