Semiconductor device having an oxide semiconductor and a metal oxide film
View Patent ↗As a transistor including an oxide semiconductor film, a transistor in which a metal oxide film containing a constituent similar to that of an oxide semiconductor film is provided between the oxide semiconductor film and a gate insulating film and a gate insulating film containing a constituent different from that of the metal oxide film and that of the oxide semiconductor film is provided to be in contact with the metal oxide film is provided. The oxide semiconductor film used for an active layer of the transistor is a highly purified and electrically i-type (intrinsic) film which is formed by heat treatment through which an impurity such as hydrogen, moisture, a hydroxyl group or a hydride is removed and oxygen which is a main component of the oxide semiconductor and reduced together with the impurity removal step is supplied.
1. A semiconductor device comprising:
a first gate electrode;
a gate insulating film over the first gate electrode;
a metal oxide film over the gate insulating film;
an oxide semiconductor film over and in contact with the metal oxide film;
a source electrode and a drain electrode over the oxide semiconductor film;
an insulating film over and in direct contact with the oxide semiconductor film, the metal oxide film, the source electrode, and the drain electrode; and
a second gate electrode over the insulating film,
wherein the metal oxide film is thicker than the oxide semiconductor film.
2. The semiconductor device according to claim 1 , wherein at least a part of a top surface of the oxide semiconductor film is in contact with the source electrode and the drain electrode.
3. The semiconductor device according to claim 1 ,
wherein at least a part of a top surface of the oxide semiconductor film is in contact with the source electrode and the drain electrode, and
wherein a side edge portion of the oxide semiconductor film and a side edge portion of the metal oxide film are aligned with each other in a channel length direction.
4. The semiconductor device according to claim 1 , wherein at least a part of a bottom surface of the source electrode and a part of a bottom surface of the drain electrode are in contact with the oxide semiconductor film.
5. The semiconductor device according to claim 1 , wherein the metal oxide film comprises an oxide of one or more of elements included in the oxide semiconductor film.
6. The semiconductor device according to claim 1 , wherein an energy gap of the metal oxide film is larger than an energy gap of the oxide semiconductor film.
7. The semiconductor device according to claim 1 , wherein an energy at a bottom of a conduction band of the metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film.
8. The semiconductor device according to claim 1 , wherein the metal oxide film comprises gallium oxide.
9. The semiconductor device according to claim 1 , wherein the gate insulating film comprises silicon oxide or hafnium oxide.
10. A semiconductor device comprising:
a first gate electrode;
a gate insulating film over the first gate electrode;
a metal oxide film over the gate insulating film;
an oxide semiconductor film in contact with the metal oxide film;
a source electrode and a drain electrode over the oxide semiconductor film;
an insulating film over and in direct contact with the oxide semiconductor film, the metal oxide film, the source electrode, and the drain electrode; and
a second gate electrode over the insulating film,
wherein the metal oxide film is thicker than the oxide semiconductor film.
11. The semiconductor device according to claim 10 , wherein the metal oxide film comprises an oxide of one or more of elements included in the oxide semiconductor film.
12. The semiconductor device according to claim 10 , wherein an energy gap of the metal oxide film is larger than an energy gap of the oxide semiconductor film.
13. The semiconductor device according to claim 10 , wherein an energy at a bottom of a conduction band of the metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film.
14. The semiconductor device according to claim 10 , wherein the metal oxide film comprises gallium oxide.
15. The semiconductor device according to claim 10 , wherein the gate insulating film comprises silicon oxide or hafnium oxide.
16. The semiconductor device according to claim 10 , wherein a potential of the first gate electrode is the same as a potential of the second gate electrode.
17. The semiconductor device according to claim 10 , wherein the second gate electrode is in direct contact with the insulating film.