Dynamic read channel calibration for non-volatile memory devices
Embodiments of the invention describe a dynamic read reference voltage for use in reading data from non-volatile memory cells. In embodiments of the invention, the read reference voltage is calibrated as the non-volatile memory device is used. Embodiments of the invention may comprise of logic and or modules to read data from a plurality of non-volatile memory cells using a first read reference voltage level (e.g., an initial read reference voltage level whose value is determined by the non-volatile device manufacturer). An Error Checking and Correction (ECC) algorithm is performed to identify whether errors exist in the data as read using the first read reference voltage level. If errors in the data as read are identified, a pre-determined value is retrieved to adjust the first read reference voltage level to a second read reference voltage level.
1. A method comprising:
tracking a number of successful reads performed on a memory device, wherein a successful read on the memory device comprises:
reading data from a plurality of flash memory cells included in a memory device using a first read reference voltage level; and
performing an error checking and correction (ECC) algorithm on the data to identify no errors or errors in the data that are correctable via the ECC algorithm; and
in response to the number of successful reads performed on the memory device exceeding a threshold value comprising a specific number of performed reads, retrieving a stored value to adjust the first read reference voltage level to a second read reference voltage level, wherein the stored value is included in a look-up table (LUT).
2. The method of claim 1 , further comprising:
in response to identifying uncorrectable errors in for read operations using the second read reference voltage level, retrieving a third stored value to adjust the second read reference voltage level to a third read reference voltage level.
3. The method of claim 2 , wherein the retrieved stored value and the second retrieved stored value comprise complementary offsets to the first read reference voltage level.
4. The method of claim 1 , further comprising persisting the second read reference voltage level to use with subsequent data reads to the plurality of flash memory cells.
5. An article of manufacture comprising a non-transitory machine-readable storage medium that provides instructions that, if executed by the machine, will cause the machine to perform operations comprising:
tracking a number of successful reads performed on a memory device, wherein a successful read on the memory device comprises:
reading data from a plurality of flash memory cells included in a memory device using a first read reference voltage level; and
performing an error checking and correction (ECC) algorithm on the data to identify no errors or errors in the data that are correctable via the ECC algorithm; and
in response to the number of successful reads performed on the memory device exceeding a threshold value comprising a specific number of performed reads, retrieving a stored value to adjust the first read reference voltage level to a second read reference voltage level, wherein the stored value is included in a look-up table (LUT).
6. The article of manufacture of claim 5 , the machine to perform operations further comprising:
in response to identifying uncorrectable errors in for read operations using the second read reference voltage level, retrieving a third stored value to adjust the second read reference voltage level to a third read reference voltage level.
7. The article of manufacture of claim 6 , wherein the retrieved stored value and the second retrieved stored value comprise complementary offsets to the first read reference voltage level.
8. The article of manufacture of claim 5 , further comprising persisting the second read reference voltage level to use with subsequent data reads to the plurality of flash memory cells.
9. A system comprising:
a flash memory device; and
a flash memory controller to
track a number of successful reads performed on a memory device, wherein a successful read on the memory device comprises:
read data from a plurality of flash memory cells included in a memory device using a first read reference voltage level; and
perform an error checking and correction (ECC) algorithm on the data to identify no errors or errors in the data that are correctable via the ECC algorithm; and
in response to the number of successful reads performed on the memory device exceeding a threshold value comprising a specific number of performed reads, retrieve a stored value to adjust the first read reference voltage level to a second read reference voltage level, wherein the stored value is included in a look-up table (LUT).
10. The system of claim 9 , the flash memory unit to further:
in response to identifying uncorrectable errors for read operations using the second read reference voltage level, retrieve a third stored value to adjust the second read reference voltage level to a third read reference voltage level.
11. The system of claim 10 , wherein the retrieved stored value and the second retrieved stored value comprise complementary offsets to the first read reference voltage level.
12. The system of claim 9 , the flash memory controller to further persist the second read reference voltage level to use with subsequent data reads to the plurality of flash memory cells.
13. The system of claim 9 , further comprising:
an antenna; and
radio frequency circuitry coupled to the antenna to receive signal data to be stored on the flash memory device.