System, method and apparatus for multi-beam lithography including a dispenser cathode for homogeneous electron emission
View Patent ↗A dispenser cathode which comprises an emission surface, a reservoir for material releasing, when heated, work-function-lowering particles, and at least one passage for allowing diffusion of work-function-lowering particles from said reservoir to said emission surface, said emission surface comprising at least one emission area and at least one non-emission area covered with emission-suppressing material and surrounding each emission area, said non-emission area comprising at least one passage connecting said reservoir with said non-emission area and debouching within a diffusion length distance from an emission area for allowing diffusion of work-function-lowering particles from said reservoir to said emission area.
1. An electron emitting dispenser cathode which comprises:
an emission surface comprising at least one emission area for emitting electrons;
a reservoir for material releasing, when heated, work function lowering particles;
a support structure for supporting said emission area, said support structure comprising a pillar;
a plurality of passages ( 7 ) connecting said reservoir and said emission surface for allowing diffusion of work function-lowering particles from said reservoir to said at least one emission area, said passages being provided directly adjacent to said at least one emission area, and said pillar defining a boundary to a passage ( 7 ) for work function lowering particles adjacent said emission area.
2. The cathode according to claim 1 , wherein the cathode comprises a cathode membrane which is provided as a metal membrane.
3. The cathode according to claim 2 , wherein the metal includes a refractory metal, wherein the metal preferably is tungsten.
4. The cathode according to claim 1 , wherein the emission area is coated with work function lowering materials.
5. The cathode according to claim 1 , wherein said passages debouch next to said emission area.
6. The cathode according to claim 1 , wherein said emission surface has at least one convex surface, preferably wherein said emission surface is convex at the location of an emission area.
7. The cathode according to claim 1 , wherein the pillar has a top forming part of said emission surface, preferably wherein the top of said pillar forms an emission area.
8. The cathode according to claim 1 , wherein a passage runs along a side of said pillar.
9. The cathode according to claim 1 , wherein the support structure is substantially non-porous for work-function lowering particles.
10. An electron source for generating a plurality of electron beams, comprising a plurality of dispenser cathodes according to claim 1 .
11. A lithography system comprising a dispenser cathode according to claim 1 .
12. The lithography system of claim 11 , further comprising
beam splitter means for splitting the electron beam generated by the dispenser cathode up into a plurality of electron beamlets,
modulator means for individually modulating substantially each electron beamlet, and
control means for controlling said modulator means and for modulating the beamlets according to a predetermined pattern.
13. The lithography system of claim 12 , with a single source, multi electron beam system, comprising only one dispenser cathode.
14. A semiconductor wafer, processed using a lithography system according to claim 11 .
15. A method for processing a semiconductor wafer, using a lithography system according to claim 11 .
16. The cathode according to claim 1 , wherein said cathode comprises an extractor electrode provided above the emission area, preferably wherein said extractor electrode, in operation, providing an electrostatic field functioning as a negative lens to emitted electrons.
17. The cathode according to claim 1 or 16 , wherein the cathode is arranged for emitting a diverging electron beam.