Methods of forming circuitry components and methods of forming an array of memory cells
A method of forming circuitry components includes forming a stack of horizontally extending and vertically overlapping features. The stack has a primary portion and an end portion. At least some of the features extend farther in the horizontal direction in the end portion moving deeper into the stack in the end portion. Operative structures are formed vertically through the features in the primary portion and dummy structures are formed vertically through the features in the end portion. Horizontally elongated openings are formed through the features to form horizontally elongated and vertically overlapping lines from material of the features. The lines individually extend from the primary portion into the end portion, and individually laterally about sides of vertically extending portions of both the operative structures and the dummy structures. Sacrificial material that is elevationally between the lines is at least partially removed in the primary and end portions laterally between the horizontally elongated openings. Other aspects and implementations are disclosed.
1. A method of forming circuitry components, comprising:
forming a stack of horizontally extending and vertically overlapping features, the stack comprising a primary portion and an end portion, at least some of the features extending farther in the horizontal direction in the end portion moving deeper into the stack in the end portion;
forming operative structures vertically through the features in the primary portion and forming dummy structures vertically through the features in the end portion; and
removing at least some sacrificial material that is elevationally between material of the features in the primary and end portions, wherein the dummy structures support material of the features from vertical movement in the end portion during said removing.
2. The method of claim 1 wherein the operative and dummy structures comprise the same material.
3. The method of claim 2 wherein the operative and dummy structures comprise a plurality of the same materials.
4. The method of claim 3 wherein the same materials are arranged in the same lateral order relative one another in the operative and dummy structures.
5. The method of claim 2 wherein the operative and dummy structures consist essentially of the same material.
6. The method of claim 1 wherein the features comprise plates.
7. The method of claim 1 wherein the operative and dummy structures comprise programmable material.
8. The method of claim 1 wherein the operative and dummy structures comprise semiconductive material.
9. The method of claim 8 wherein the semiconductive material of the operative structures comprises interconnected channels of a plurality of vertically oriented transistors.
10. The method of claim 9 wherein interconnected channels are of vertically oriented charge storage transistors.
11. The method of claim 1 wherein the operative and dummy structures comprise conductive material.
12. A method of forming circuitry components, comprising:
forming a stack of horizontally extending and vertically overlapping features, the stack comprising a primary portion and an end portion, at least some of the features extending farther in the horizontal direction in the end portion moving deeper into the stack in the end portion;
forming operative structures vertically through the features in the primary portion and forming dummy structures vertically through the plates in the end portion;
forming horizontally elongated openings through the structures to form horizontally elongated and vertically overlapping lines from material of the features, the lines individually extending from the primary portion into the end portion and individually laterally about sides of vertically extending portions of both the operative structures and the dummy structures; and
removing at least some sacrificial material that is elevationally between the lines in the primary and end portions laterally between the openings.
13. The method of claim 12 wherein the removing comprises etching of the sacrificial material selectively relative to material of the lines, the operative structures, and the dummy structures.
14. The method of claim 12 wherein the operative and dummy structures comprise hollow cylinders.
15. The method of claim 12 wherein the operative and dummy structures comprise laterally solid pillars.
16. The method of claim 12 wherein the features comprise plates.
17. A method of forming circuitry components, comprising:
forming a stack of horizontally extending and vertically overlapping features, the stack comprising a primary portion and an end portion, at least some of the features extending farther in the horizontal direction in the end portion moving deeper into the stack in the end portion;
forming primary portion openings through the features in the primary portion and forming end portion openings through the features in the in the end portion;
forming at least one of conductive material, semiconductive material, and programmable material in the primary portion openings and the end portion openings and forming operative structures therewith within the primary portion openings and forming dummy structures therewith within the end portion openings;
forming horizontally elongated openings through the features to form horizontally elongated and vertically overlapping lines from material of the features, the lines individually extending from the primary portion into the end portion and individually laterally about sides of both the operative structures and the dummy structures; and
removing at least a portion of sacrificial material that is elevationally between the lines in the primary and end portions laterally between the horizontally elongated openings selectively relative to the lines, the operative structures, and the dummy structures.
18. The method of claim 17 comprising forming the primary portion openings and the end portion openings at the same time.
19. The method of claim 17 comprising forming the primary portion openings and the end portion openings at different times.
20. The method of claim 17 comprising forming at least some of the end portion openings horizontally overlap ends of individual ones of the features.
21. The method of claim 17 comprising forming the primary portion openings and the end portion openings to have the same horizontal and vertical cross sections.
22. The method of claim 17 comprising forming the primary portion openings and the end portion openings to have at least one of different horizontal cross sections or different vertical cross sections.
23. The method of claim 17 wherein said at least one of conductive material, semiconductive material, and programmable material is deposited simultaneously into the primary portion openings and the end portion openings.
24. The method of claim 17 wherein the features comprise plates.
25. A method of forming an array of memory cells, comprising:
forming a stack of alternating dielectric material and sacrificial material, the stack comprising a primary portion and an end portion, the end portion having sacrificial material-comprising stairs;
forming a plurality of first openings into the primary portion of the stack;
forming a plurality of second openings into the end portion of the stack;
simultaneously forming at least one of conductive material, semiconductive material, and programmable material in the first and second openings and forming operative structures therewith within the first openings in the primary portion and forming dummy structures therewith within the second openings in the end portion;
forming horizontally elongated openings into the stack which extend from the primary portion into the end portion laterally between the material simultaneously formed to within the first and second openings;
removing at least a portion of the sacrificial material that is laterally between the horizontally elongated openings selectively relative to the dielectric material to form void spaces elevationally between vertically spaced horizontal lines of the dielectric material;
after the removing, forming conductive material into the horizontally elongated openings and the void spaces;
removing at least a portion of the conductive material from the horizontally elongated openings to form vertically spaced horizontal conductive lines from the conductive material within the void spaces elevationally between the horizontal lines of dielectric material, the conductive lines collectively crossing a row of the operative and dummy structures at different respective elevations, individual ones of the memory cells comprising an intersection of an individual horizontal conductive line and an individual operative structure; and
forming a respective communicative contact to a stair extension of individual ones of the horizontal conductive lines in the end portion.
26. The method of claim 25 wherein the memory cells comprise a portion of NAND architecture, the at least one formed material comprises semiconductive material, and the operative structures comprise interconnected channel regions of a NAND string.
27. The method of claim 25 wherein the memory cells comprise cross-point memory cells and the at least one formed material comprises programmable material.
28. The method of claim 25 comprising forming the first and second openings using the same masking step.
29. The method of claim 25 comprising forming the first and second openings using different masking steps.
30. The method of claim 25 wherein the sacrificial material is dielectric.
31. The method of claim 25 wherein the sacrificial material is at least one of semiconductive and conductive.
32. The method of claim 25 wherein the features comprise plates.