TSV structure and method for forming the same

1. A TSV structure comprising:

a wafer comprising a first side and a second side;

a through via connecting said first side and said second side;

a conductive layer filling up said through via;

a through via dielectric ring surrounding and directly contacting said conductive layer;

a first conductive ring surrounding and directly contacting said through via dielectric ring, wherein said first conductive ring and said wafer are of the same material; and

a first dielectric ring surrounding and directly contacting said first conductive ring, and surrounded by said wafer.

2. The TSV structure of claim 1 , wherein said conductive layer is electrically connected to a core voltage and said first conductive ring is electrically connected to a first voltage and said core voltage and said first voltage are substantially the same.

3. The TSV structure of claim 1 , wherein said conductive layer is electrically connected to a core voltage and said first conductive ring is electrically connected to a first voltage and said core voltage is different from said first voltage.

4. The TSV structure of claim 1 , wherein said first conductive ring is for use in shielding the interaction between said conductive layer and said wafer.

5. The TSV structure of claim 1 , wherein said conductive layer has a core conductive material and said first conductive ring has a first conductive material and said core conductive material and said first conductive material are substantially the same.

6. The TSV structure of claim 1 , wherein said conductive layer has a core conductive material and said first conductive ring has a first conductive material and said core conductive material is different from said first conductive material.

7. The TSV structure of claim 1 , further comprising:

a second conductive ring surrounding and directly contacting said first dielectric ring; and

a second dielectric ring surrounding and directly contacting said second conductive ring, and surrounded by said wafer.

8. The TSV structure of claim 1 , wherein said conductive layer has a column structure with a diameter of 5 μm-20 μm.

9. The TSV structure of claim 1 , further comprising:

a multi-layer metal structure disposed on said first side and comprising a first layer, a second layer and a third layer;

a first conductive ring first extension part composed of said first layer;

a first conductive ring third extension part composed of said third layer; and

a conductive layer second extension part composed of said second layer, wherein said first conductive ring first extension part and said first conductive ring third extension part together sandwich said conductive layer second extension part to shield said conductive layer extension part.

10. The TSV structure of claim 1 , wherein said conductive layer second extension part has a serpent-like structure.

11. A method for forming a through-silicon via structure, comprising:

providing a wafer comprising a substrate, a first side and a second side;

forming an composite annular structure in said wafer, wherein said composite annular structure comprises:

a core substrate column;

a through via dielectric ring comprising a dielectric material and surrounding and directly contacting said core substrate column;

a first substrate ring surrounding and directly contacting said through via dielectric ring; and

a first dielectric ring surrounding and directly contacting said first substrate ring, and surrounded by said wafer;

thinning said wafer from the second side to expose said composite annular structure;

forming a second dielectric layer to cover the second side and to expose said composite annular structure;

completely removing said substrate in said core substrate column to form a through via which connects said first side and said second side; and

filling up said through via with a core conductive layer to obtain said through-silicon via structure.

12. The method of claim 11 , further comprising

performing a semiconductor procedure after said through-silicon via structure is obtained.

13. The method of claim 11 , further comprising

performing a semiconductor procedure before said through-silicon via structure is obtained.

14. The method of claim 11 , further comprising

completely removing said first substrate ring to form a first hollow ring; and

filling up said first hollow ring with a first conductive material.

15. The method of claim 14 , wherein said core conductive material and said first conductive material are substantially the same.

16. The method of claim 14 , wherein said core conductive material is different from said first conductive material.

17. The method of claim 11 , further comprising:

forming a second conductive ring surrounding and directly contacting said first dielectric ring; and

forming a second dielectric ring surrounding and directly contacting said second conductive ring, and surrounded by said wafer.

18. The method of claim 11 , wherein said conductive layer has a column structure with a diameter of 5 μm-20 μm.

19. The method of claim 11 , further comprising:

forming a multi-layer metal structure disposed on said first side and comprising a first layer, a second layer and an third layer;

forming a first conductive ring first extension part composed of said first layer;

forming a first conductive ring third extension part composed of said third layer; and

forming a conductive layer second extension part composed of said second layer.

20. The method of claim 19 , wherein said first conductive ring first extension part and said first conductive ring third extension part together sandwich said conductive layer second extension part to shield said conductive layer second extension part.

21. The method of claim 20 , wherein said conductive layer second extension part has a zigzag structure.