Rod type light emitting device and method for fabricating the same
View Patent ↗Disclosed herein is a rod type light emitting device and method for fabricating the same, wherein a plurality of rod structures is sequentially formed with a semiconductor layer doped with a first polarity dopant, an active layer, and a semiconductor layer doped with a second polarity dopant.
1. A rod type light emitting device, comprising:
a metallic support layer;
a first electrode on the support layer;
a plurality of rod structures on the first electrode, the plurality of rod structures having a first semiconductor layer doped with a first polarity dopant, an active layer, and a second semiconductor layer doped with a second polarity dopant; and
a second electrode on the plurality of rods,
wherein the first electrode includes an ohmic-contact and a reflection layer, and the second electrode includes an ohmic-contact and a transmission layer.
2. The light emitting device of claim 1 , further comprising a third semiconductor layer between the plurality of rod structures and the first electrode.
3. The light emitting device of claim 2 , wherein the third semiconductor layer has the first polarity.
4. The light emitting device of claim 1 , further comprising a buffer layer between the plurality of rod structures and the second electrode.
5. The light emitting device of claim 1 , wherein individual rod structures of the plurality of rod structures are separated from one another.
6. The light emitting device of claim 1 , wherein the second semiconductor layer doped with the second polarity dopant includes a multi layer comprising at least one of Al 1 Ga 1-x N (0≦x≦1), In y Ga 1-y N (0≦y≦1), Zn z Mg 1-z O (0≦z≦1), or Zn u Cd 1-u O (0≦u≦1).
7. The light emitting device of claim 1 , wherein each rod structure within the plurality of rod structures has a width in a range of 1˜1,000 nm.