Method for manufacturing semiconductor device
View Patent ↗An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of forming a first insulating film; performing oxygen doping treatment on the first insulating film to supply oxygen to the first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connected to the source electrode and the drain electrode, over the first insulating film; performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film; and forming a gate electrode in a region overlapping with the oxide semiconductor film, over the second insulating film. The manufacturing method allows the formation of a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability.
1. A method for manufacturing a semiconductor device, the method comprising the steps of:
forming a first insulating film over a substrate;
performing oxygen doping treatment on the first insulating film;
forming a source electrode, a drain electrode, and an oxide semiconductor film over the first insulating film;
forming a second insulating film over the source electrode, the drain electrode, and the oxide semiconductor film; and
forming a gate electrode over the second insulating film so that the gate electrode overlaps with the oxide semiconductor film,
wherein the first insulating film comprises a fourth insulating film and a fifth insulating film over the fourth insulating film, and
wherein the fifth insulating film comprises a component which is the same as that of the oxide semiconductor film.
2. The method according to claim 1 , wherein the oxide semiconductor film is formed over the source electrode and the drain electrode.
3. The method according to claim 1 , wherein the source electrode and the drain electrode are formed over the oxide semiconductor film.
4. The method according to claim 1 , further comprising a step of forming a third insulating film over the gate electrode.
5. The method according to claim 4 ,
wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film, and
wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film.
6. The method according to claim 4 ,
wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film,
wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film, and
wherein the seventh insulating film comprises a component which is different from that of the oxide semiconductor film.
7. The method according to claim 1 ,
wherein the fourth insulating film comprises a component which is different from that of the oxide semiconductor film.
8. The method according to claim 1 , wherein the oxide semiconductor film comprises gallium as a component.
9. The method according to claim 1 , wherein a heating of the substrate is performed at a temperature equal to or higher than 100° C. and equal to or lower than 600° C.
10. The method according to claim 1 , further comprising a step of performing heat treatment on the oxide semiconductor film at a temperature equal to or higher than 250° C. and equal to or lower than 650° C.
11. A method for manufacturing a semiconductor device, the method comprising the steps of:
forming a first insulating film over a substrate;
supplying oxygen to the first insulating film;
forming a source electrode, a drain electrode, and an oxide semiconductor film over the first insulating film;
forming a second insulating film over the source electrode, the drain electrode, and the oxide semiconductor film; and
forming a gate electrode over the second insulating film so that the gate electrode overlaps with the oxide semiconductor film,
wherein the first insulating film comprises a fourth insulating film and a fifth insulating film over the fourth insulating film, and
wherein the fifth insulating film comprises a component which is the same as that of the oxide semiconductor film.
12. The method according to claim 11 , wherein the oxide semiconductor film is formed over the source electrode and the drain electrode.
13. The method according to claim 11 , wherein the source electrode and the drain electrode are formed over the oxide semiconductor film.
14. The method according to claim 11 , further comprising a step of forming a third insulating film over the gate electrode.
15. The method according to claim 14 ,
wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film, and
wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film.
16. The method according to claim 14 ,
wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film,
wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film, and
wherein the seventh insulating film comprises a component which is different from that of the oxide semiconductor film.
17. The method according to claim 11 ,
wherein the fourth insulating film comprises a component which is different from that of the oxide semiconductor film.
18. The method according to claim 11 , wherein the oxide semiconductor film comprises gallium as a component.
19. The method according to claim 11 , further comprising a step of performing heat treatment on the oxide semiconductor film at a temperature equal to or higher than 250° C. and equal to or lower than 650° C.
20. A method for manufacturing a semiconductor device, the method comprising the steps of:
forming a first insulating film over a substrate;
performing oxygen doping treatment on the first insulating film; and
forming a transistor over the first insulating film, the transistor comprising a source electrode, a drain electrode, an oxide semiconductor film, a gate insulating film, and a gate electrode,
wherein the first insulating film comprises a fourth insulating film and a fifth insulating film over the fourth insulating film, and
wherein the fifth insulating film comprises a component which is the same as that of the oxide semiconductor film.
21. The method according to claim 20 , wherein the oxide semiconductor film is formed over the source electrode and the drain electrode.
22. The method according to claim 20 , wherein the source electrode and the drain electrode are formed over the oxide semiconductor film.
23. The method according to claim 20 , further comprising a step of forming a third insulating film over the transistor.
24. The method according to claim 23 ,
wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film, and
wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film.
25. The method according to claim 23 ,
wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film,
wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film, and
wherein the seventh insulating film comprises a component which is different from that of the oxide semiconductor film.
26. The method according to claim 20 ,
wherein the fourth insulating film comprises a component which is different from that of the oxide semiconductor film.
27. The method according to claim 20 , wherein the oxide semiconductor film comprises gallium as a component.