Amorphous silicon film formation method and amorphous silicon film formation apparatus

1. An amorphous silicon film formation method for forming a film including an amorphous silicon film on a base, the amorphous silicon film formation method comprising:

forming a seed layer on a surface of the base by heating the base and by flowing and adsorbing aminosilane-based gas onto the heated base instead of decomposing the aminosilane-based gas; and

forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group.

2. The amorphous silicon film formation method of claim 1 , wherein a temperature for heating the base in the forming the seed layer is lower than a temperature for heating the base in the forming the amorphous silicon film, and

a process time for forming the seed layer in the forming the seed layer is shorter than a process time for forming the amorphous silicon film in the forming the amorphous silicon film.

3. The amorphous silicon film formation method of claim 1 , wherein a thickness of the seed layer is from 0.1 nm to 0.3 nm.

4. The amorphous silicon film formation method of claim 3 , wherein a thickness of the amorphous silicon film is from 50 nm to 100 nm.

5. The amorphous silicon film formation method of claim 1 , wherein the aminosilane-based gas is selected from among gases containing at least one of:

BAS (butylaminosilane);

BTBAS (bis(tertiary butyl aminosilane));

DMAS (dimethyl aminosilane);

BDMAS (bis(dimethyl aminosilane));

TDMAS (tris(dimethyl aminosilane));

DEAS (diethyl aminosilane);

BDEAS (bis(diethyl aminosilane));

DPAS (dipropyl aminosilane); and

DIPAS (diisopropyl aminosilane), and

the silane-based gas containing no amino group is selected from among gases containing at least one of:

SiH 2 ;

SiH 4 ;

SiH 6 ;

Si 2 H 4 ;

Si 2 H 6 ;

a silicon hydride expressed as Si m H 2m+2 , where m is a natural number equal to or greater than 3; and

a silicon hydride expressed as Si n H 2n , where n is a natural number equal to or greater than 3.

6. The amorphous silicon film formation method of claim 5 , wherein the silicon hydride expressed as Si m H 2m+2 , where m is a natural number equal to or greater than 3, is selected from at least one of:

trisilane (Si 3 H 8 );

tetrasilane (Si 4 H 10 );

pentasilane (Si 5 H 12 );

hexasilane (Si 6 H 14 ); and

heptasilane (Si 7 H 16 ), and

the silicon hydride expressed as Si n H 2n , where n is a natural number equal to or greater than 3, is selected from at least one of:

cyclotrisilane (Si 3 H 6 );

cyclotetrasilane (Si 4 H 8 );

cyclopentasilane (Si 5 H 10 );

cyclohexasilane (Si 6 H 12 ); and

cycloheptasilane (Si 7 H 14 ).

7. The amorphous silicon film formation method of claim 1 , wherein the amorphous silicon film formation method is used in a process for manufacturing a semiconductor device.

8. The amorphous silicon film formation of claim 7 , wherein the amorphous silicon film is used to fill up a contact hole and/or a line in the semiconductor device.

9. An amorphous silicon film formation apparatus which forms an amorphous silicon film on a base, the amorphous silicon film formation apparatus comprising:

a process chamber which houses an object to be processed having a base on which the amorphous silicon film is to be formed;

a process gas supplying mechanism which supplies gas used for a process into the process chamber;

a heating device which heats the object to be processed housed in the process chamber;

an exhauster which evacuates the interior of the process chamber; and

a controller which controls the process gas supplying mechanism, the heating device, and the exhauster, wherein the controller controls the process gas supplying mechanism, the heating device, and the exhauster to perform forming the seed layer and forming the amorphous silicon film of claim 1 .

10. An amorphous silicon film formation method for forming a film including an amorphous silicon film on a base, the amorphous silicon film formation method comprising:

forming a seed layer on a surface of the base by heating the base and by flowing and adsorbing aminosilane-based gas onto the heated base instead of decomposing the aminosilane-based gas, and forming the amorphous silicon film on the seed layer,

wherein a thickness of the seed layer is from 0.1 nm to 0.3 nm.

11. The amorphous silicon film formation method of claim 10 , wherein a thickness of the amorphous silicon film is from 50 nm to 100 nm.

12. The amorphous silicon film formation method of claim 10 , wherein the aminosilane-based gas is selected from among gases containing at least one of:

BAS (butylaminosilane);

BTBAS (bis(tertiary butyl aminosilane));

DMAS (dimethyl aminosilane);

BDMAS (bis(dimethyl aminosilane));

TDMAS (tris(dimethyl aminosilane));

DEAS (diethyl aminosilane);

BDEAS (bis(diethyl aminosilane));

DPAS (dipropyl aminosilane); and

DIPAS (diisopropyl aminosilane).

13. The amorphous silicon film formation method of claim 10 , wherein the amorphous silicon film formation method is used in a process for manufacturing a semiconductor device.

14. The amorphous silicon film formation of claim 13 , wherein the amorphous silicon film is used to fill up a contact hole and/or a line in the semiconductor device.