Circuit component with conductive layer structure
View Patent ↗A circuit component comprising a substrate, and a conductive layer over the substrate, wherein the conductive layer comprises a first portion between a first opening in the conductive layer and a second opening in the conductive layer, wherein the first and second openings are enclosed by the conductive layer, wherein a void is over the substrate and under the conductive layer, wherein the first portion and the first and second openings are over the void.
1. A circuit component comprising:
a substrate; and
a conductive layer over said substrate, wherein said conductive layer comprises a first portion between a first opening in said conductive layer and a second opening in said conductive layer, wherein said first and second openings are enclosed by said conductive layer, wherein a void is over said substrate and under said conductive layer, wherein said first portion and said first and second openings are over said void.
2. The circuit component of claim 1 , wherein said substrate comprises a silicon substrate.
3. The circuit component of claim 1 further comprising a metal pad over said substrate and a dielectric layer over said substrate, wherein said conductive layer is further over said dielectric layer, wherein said conductive layer is connected to said metal pad through a third opening in said dielectric layer.
4. The circuit component of claim 3 , wherein said metal pad comprises aluminum.
5. The circuit component of claim 3 , wherein said metal pad comprises copper.
6. The circuit component of claim 1 further comprising a dielectric layer over said substrate, wherein said conductive layer is further over said dielectric layer.
7. The circuit component of claim 6 , wherein said dielectric layer comprises a nitride.
8. The circuit component of claim 6 , wherein said dielectric layer comprises silicon nitride.
9. The circuit component of claim 1 , wherein said conductive layer comprises a first metal layer and a second metal layer on said first metal layer, wherein said first metal layer is under said second metal layer, but not at a sidewall of said second metal layer.
10. The circuit component of claim 9 , wherein said first metal layer comprises titanium.
11. The circuit component of claim 9 , wherein said first metal layer comprises titanium nitride.
12. The circuit component of claim 1 further comprises a dielectric layer on said conductive layer and over said substrate.
13. The circuit component of claim 12 , wherein said dielectric layer comprises a polymer.
14. The circuit component of claim 1 , wherein said conductive layer comprises copper.
15. The circuit component of claim 1 , wherein said conductive layer comprises nickel.
16. The circuit component of claim 1 , wherein said conductive layer comprises gold.
17. The circuit component of claim 1 further comprising a tin-containing layer over said conductive layer.
18. The circuit component of claim 1 , wherein said void communicates with said first and second openings.
19. The circuit component of claim 1 , wherein no insulating layer is between said conductive layer and said void.
20. The circuit component of claim 19 further comprising a metal pad over said substrate and a dielectric layer over said substrate, wherein said conductive layer is further over said dielectric layer, wherein said conductive layer is connected to said metal pad through a third opening in said dielectric layer.
21. The circuit component of claim 20 , wherein said metal pad comprises aluminum.
22. The circuit component of claim 19 further comprising a dielectric layer over said substrate, wherein said void is over said dielectric layer.
23. The circuit component of claim 22 , wherein said dielectric layer comprises a nitride.
24. The circuit component of claim 19 , wherein said conductive layer comprises copper.
25. The circuit component of claim 6 , wherein said void is further over said dielectric layer.