Substrate processing apparatus
View Patent ↗A process for producing a semiconductor device, comprising the steps of conducting film formation on substrate ( 10 ) in reactor ( 1 ); and unloading the substrate ( 10 ) after film formation from the reactor ( 1 ) and thereafter effecting forced air cooling of the interior of the reactor ( 1 ) while the substrate ( 10 ) is absent in the reactor ( 1 ). The stress of deposited film adhering in the reactor ( 1 ) is increased over that exhibited at air cooling without blower so as to positively generate thermal stress with the result that the deposited film would undergo forced cracking over that exhibited at air cooling without blower. Microparticles scattered by the cracking are efficiently discharged from the reactor forcibly through purging in the reactor in the state of atmospheric pressure.
1. A substrate processing apparatus comprising:
a reaction furnace in which a film is formed on a substrate;
a film-forming gas supply line through which a film-forming gas is supplied into the reaction furnace;
a purge gas supply line through which a purge gas is supplied into the reaction furnace;
an exhaust line through which an interior of the reaction furnace is exhausted;
a transfer device which loads and unloads the substrate into and from the reaction furnace;
a thermal insulation cover provided covering the reaction furnace;
a forcibly cooling device which forcibly cools the interior of the reaction furnace by exhausting atmospheric gas in a space between the thermal insulating cover and the reaction furnace simultaneously with flowing a cooling medium in the space between the thermal insulating cover and the reaction furnace, and
a controller which controls the film-forming gas supply line, the purge gas supply line, the exhaust line, the transfer device and the forcibly cooling device to perform processing of loading a substrate into the reaction furnace and forming the film on the substrate by supplying the film-forming gas into the reaction furnace, and to perform processing of purging the interior of the reaction furnace by supplying the purge gas into the reaction furnace while forcibly cooling the interior of the reaction furnace by exhausting atmospheric gas in the space between the thermal insulating cover and the reaction furnace simultaneously with flowing the cooling medium in the space between the thermal insulating cover and the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate is unloaded from the reaction furnace.
2. A substrate processing apparatus comprising:
a reaction furnace in which a film is formed on a substrate;
a film-forming gas supply line through which a film-forming gas is supplied into the reaction furnace;
a purge gas supply line through which a purge gas is supplied into the reaction furnace;
a cleaning gas supply line through which a cleaning gas is supplied into the reaction furnace;
an exhaust line through which an interior of the reaction furnace is exhausted;
a transfer device which loads and unloads the substrate into and from the reaction furnace;
a thermal insulation cover provided covering the reaction furnace;
a forcibly cooling device which forcibly cools the interior of the reaction furnace by exhausting atmospheric gas in a space between the thermal insulating cover and the reaction furnace simultaneously with flowing a cooling medium in the space between the thermal insulating cover and the reaction furnace, and
a controller which controls the film-forming gas supply line, the purge gas supply line, the cleaning gas supply line, the exhaust line, the transfer device and the forcibly cooling device to perform processing of loading a substrate into the reaction furnace and forming the film on the substrate by supplying the film-forming gas into the reaction furnace, to perform processing of purging the interior of the reaction furnace by supplying the purge gas into the reaction furnace while forcibly cooling the interior of the reaction furnace by exhausting atmospheric gas in the space between the thermal insulating cover and the reaction furnace simultaneously with flowing the cooling medium in the space between the thermal insulating cover and the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate is unloaded from the reaction furnace and to perform gas-cleaning processing of the interior of the reaction furnace by supplying the cleaning gas into the reaction furnace in a state where the substrate does not exist in the reaction furnace after repeating each of the above processing.
3. A substrate processing apparatus comprising:
a reaction furnace in which a film is formed on a substrate;
a film-forming gas supply line through which a film-forming gas is supplied into the reaction furnace;
a purge gas supply line through which a purge gas is supplied into the reaction furnace;
an exhaust line through which an interior of the reaction furnace is exhausted;
a support tool by which the substrate is supported;
a substrate transfer device which charges and discharges the substrate to and from the support tool;
a support tool transfer device which loads and unloads the support tool into and from the reaction furnace;
a thermal insulation cover provided covering the reaction furnace;
a forcibly cooling device which forcibly cools the interior of the reaction furnace by exhausting atmospheric gas in a space between the thermal insulating cover and the reaction furnace simultaneously with flowing a cooling medium in the space between the thermal insulating cover and the reaction furnace, and
a controller which controls the film-forming gas supply line, the purge gas supply line, the exhaust line, the substrate transfer device, the support tool transfer device and the forcibly cooling device to perform processing of loading the support tool supporting a substrate into the reaction furnace and forming the film on the substrate by supplying the film-forming gas into the reaction furnace, to perform processing of purging the interior of the reaction furnace by supplying the purge gas into the reaction furnace while forcibly cooling the interior of the reaction furnace by exhausting atmospheric gas in the space between the thermal insulating cover and the reaction furnace simultaneously with flowing the cooling medium in the space between the thermal insulating cover and the reaction furnace in a state where the substrate does not exist in the reaction furnace after the support tool supporting the substrate after the film forming is unloaded from the reaction furnace and to perform the processing of purging the interior of the reaction furnace simultaneously with discharging the substrate after the film forming from the support tool and/or charging a substrate to be processed next to the support tool.
4. A substrate processing apparatus comprising:
a reaction furnace in which a film is formed on a substrate;
a film-forming gas supply line through which a film-forming gas is supplied into the reaction furnace;
a purge gas supply line through which a purge gas is supplied into the reaction furnace;
a first exhaust line through which an interior of the reaction furnace is exhausted;
a second exhaust line, which is different from the first exhaust line, through which the interior of the reaction furnace is exhausted;
a transfer device which loads and unloads the substrate into and from the reaction furnace;
a thermal insulation cover provided covering the reaction furnace;
a forcibly cooling device which forcibly cools the interior of the reaction furnace by exhausting atmospheric gas in a space between the thermal insulating cover and the reaction furnace simultaneously with flowing a cooling medium in the space between the thermal insulating cover and the reaction furnace, and
a controller which controls the film-forming gas supply line, the purge gas supply line, the first exhaust line, the second exhaust line, the transfer device and the forcibly cooling device to perform processing of loading a substrate into the reaction furnace and forming the film on the substrate by supplying the film-forming gas into the reaction furnace and exhausting the interior of the reaction furnace through the first exhaust line, and to perform processing of purging the interior of the reaction furnace by supplying the purge gas into the reaction furnace and exhausting the interior of the reaction furnace through the second exhaust line while forcibly cooling the interior of the reaction furnace by exhausting atmospheric gas in the space between the thermal insulating cover and the reaction furnace simultaneously with flowing the cooling medium in the space between the thermal insulating cover and the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate is unloaded from the reaction furnace.
5. A substrate processing apparatus comprising:
a reaction furnace in which a film is formed on a substrate;
a film-forming gas supply line through which a film-forming gas is supplied into the reaction furnace;
a purge gas supply line through which a purge gas is supplied into the reaction furnace;
an exhaust line through which an interior of the reaction furnace is exhausted;
a transfer device which loads and unloads the substrate into and from the reaction furnace;
a thermal insulation cover provided covering the reaction furnace;
a forcibly cooling device which forcibly cools the interior of the reaction furnace by exhausting atmospheric gas in a space between the thermal insulating cover and the reaction furnace simultaneously with flowing a cooling medium in the space between the thermal insulating cover and the reaction furnace, and
a controller which controls the film-forming gas supply line, the purge gas supply line, the exhaust line, the transfer device and the forcibly cooling device to perform processing of loading a substrate into the reaction furnace and forming the film on the substrate by supplying the film-forming gas into the reaction furnace, and to perform processing of purging the interior of the reaction furnace by supplying the purge gas into the reaction furnace while forcibly cooling the interior of the reaction furnace by exhausting atmospheric as in the space between the thermal insulating cover and the reaction furnace simultaneously with flowing the cooling medium in the space between the thermal insulating cover and the reaction furnace after once increasing a temperature of the interior of the reaction furnace to a temperature higher than a film forming temperature in a state where the substrate does not exist in the reaction furnace after the substrate is unloaded from the reaction furnace.
6. A substrate processing apparatus comprising:
a reaction furnace in which a film is formed on a substrate;
a film-forming gas supply line through which a film-forming gas is supplied into the reaction furnace;
a purge gas supply line through which a purge gas is supplied into the reaction furnace;
an exhaust line through which an interior of the reaction furnace is exhausted;
a transfer device which loads and unloads the substrate into and from the reaction furnace;
a thermal insulation cover provided covering the reaction furnace;
a forcibly cooling device which forcibly cools the interior of the reaction furnace by flowing a cooling medium in the space between the thermal insulating cover and the reaction furnace, and
a controller which controls the film-forming gas supply line, the purge gas supply line, the exhaust line, the transfer device and the forcibly cooling device to perform processing of loading a substrate into the reaction furnace and forming the film on the substrate by supplying the film-forming gas into the reaction furnace, and to perform processing of purging the interior of the reaction furnace by supplying the purge gas into the reaction furnace while forcibly cooling the interior of the reaction furnace by flowing the cooling medium in the space between the thermal insulating cover and the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate is unloaded from the reaction furnace, wherein the processing of purging the interior of the reaction furnace includes forcibly generating a crack in a deposited film formed in the reaction furnace by forcibly cooling the interior of the reaction furnace and discharging particles generated by the crack out of the reaction furnace by purging the interior of the reaction furnace.
7. The substrate processing apparatus as recited in claim 1 , wherein the controller is configured to control the purge gas supply line so that air or N 2 is flowed as the cooling medium in the space between the thermal insulating cover and the reaction furnace in the processing of purging the interior of the reaction furnace.
8. The substrate processing apparatus as recited in claim 1 , wherein the controller is configured to control the forcibly cooling device so that a temperature of the interior of the reaction furnace is lowered at a temperature lowering rate of equal to or more than 10° C./min in the processing of purging the interior of the reaction furnace.
9. The substrate processing apparatus as recited in claim 1 , wherein the controller is configured to control the forcibly cooling device so that a temperature of the interior of the reaction furnace is lowered at a temperature lowering rate of equal to or more than 20° C./min in the processing of purging the interior of the reaction furnace.
10. The substrate processing apparatus as recited in claim 1 , wherein the controller is configured to control the forcibly cooling device so that a temperature of the interior of the reaction furnace is lowered at a temperature lowering rate of equal to or more than 10° C./min and equal to or less than 100° C./min in the processing of purging the interior of the reaction furnace.
11. The substrate processing apparatus as recited in claim 1 , wherein the controller is configured to control the forcibly cooling device so that a temperature of the interior of the reaction furnace is lowered at a temperature lowering rate of equal to or more than 20° C./min and equal to or less than 100° C./min in the processing of purging the interior of the reaction furnace.
12. The substrate processing apparatus as recited in claim 1 , wherein the controller is configured to control the purge gas supply line so that the purging is performed by supplying the purge gas at a flow rate of equal to or more than 10 L/min into the reaction furnace in the processing of purging the interior of the reaction furnace.
13. The substrate processing apparatus as recited in claim 1 , wherein the controller is configured to control the purge gas supply line so that the purging is performed by supplying the purge gas at a flow rate of equal to or more than 20 L/min into the reaction furnace in the processing of purging the interior of the reaction furnace.
14. The substrate processing apparatus as recited in claim 1 , wherein the controller is configured to control the purge gas supply line and the exhaust line so that the purging is performed in a state where a pressure in the reaction furnace is maintained to atmospheric pressure.
15. The substrate processing apparatus as recited in claim 1 , wherein the controller is configured to control the purge gas supply line, the exhaust line and the forcibly cooling device so that the processing of purging the interior of the reaction furnace includes forcibly generating a crack in a deposited film formed in the reaction furnace by forcibly cooling the interior of the reaction furnace and discharging particles generated by the crack out of the reaction furnace by purging the interior of the reaction furnace.
16. The substrate processing apparatus as recited in claim 1 , wherein the reaction furnace is a hot wall type reaction furnace.
17. The substrate processing apparatus as recited in claim 4 , wherein the controller is configured to control the purge gas supply line and the second exhaust line so that the purging is performed in a state where a pressure in the reaction furnace is maintained to atmospheric pressure.
18. The substrate processing apparatus as recited in claim 4 , wherein the first exhaust line is in communication with a vacuum pump and the second exhaust line is in communication with an exhaust system of a building service.