Methods of forming semiconductor devices and devices formed using such methods
Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.
1. A method of forming a semiconductor device, the method comprising:
flowing CO 2 at a pressure greater than about twenty (20.0) MPa and a temperature greater than about sixty-six degrees Celsius (66° C.) through an enclosure to subject a single source precursor within the enclosure to the CO 2 ;
decomposing the single source precursor in the CO 2 ;
forming a plurality of particles each comprising a semiconductor material from one or more products of the decomposition of the single source precursor; and
establishing electrical contact between the plurality of particles and at least one electrode.
2. The method of claim 1 , further comprising providing the plurality of particles on another semiconductor material.
3. The method of claim 2 , wherein providing the plurality of particles on another semiconductor material comprises:
providing the another semiconductor material within the enclosure;
providing the single source precursor within the enclosure; and
subjecting the single source precursor to the CO 2 within the enclosure.
4. The method of claim 1 , further comprising configuring the semiconductor device as at least a portion of at least one of a diode, a light emitting diode, a photovoltaic device, a sensor, a solid-state laser, and an integrated circuit.
5. A method of forming a semiconductor device, the method comprising:
exposing a single source precursor material to supercritical CO 2 at a pressure greater than about twenty (20.0) MPa and a temperature greater than about sixty-six degrees Celsius (66° C.) to form a plurality of chalcopyrite nanoparticles;
forming a layer of semiconductor material having a first major side and a second major side;
providing electrical contact between a first electrode and the first major side of the layer of semiconductor material;
depositing the plurality of chalcopyrite nanoparticles over the second major side of the layer of semiconductor material; and
providing electrical contact between a second electrode and at least some chalcopyrite nanoparticles of the plurality of chalcopyrite nanoparticles.
6. A semiconductor device comprising a plurality of nanoparticles each comprising a chalcopyrite material, at least some nanoparticles of the plurality of nanoparticles in electrical contact with at least one electrode, the plurality of nanoparticles formed by a process comprising:
subjecting a single source precursor to supercritical CO 2 ; and
forming the plurality of nanoparticles to comprise the chalcopyrite material from one or more products of decomposition of the single source precursor in the supercritical CO 2 .
7. The semiconductor device of claim 6 , wherein the semiconductor device comprises as at least a portion of at least one of a diode, a light emitting diode, a photovoltaic device, a sensor, a solid-state laser, and an integrated circuit.
8. The method of claim 2 , further comprising establishing electrical contact between the another semiconductor material and another electrode.