Semiconductor device and manufacturing method of the same
View Patent ↗One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.
1. A manufacturing method of a semiconductor device, comprising the steps of:
forming an insulating film;
forming a source electrode layer and a drain electrode layer over the insulating film;
forming an oxide semiconductor film covering the insulating film, the source electrode layer, and the drain electrode layer;
forming a first gate insulating film over and in contact with the oxide semiconductor film by a plasma chemical vapor deposition method by using a deposition gas containing silicon fluoride and oxygen;
processing the oxide semiconductor film and the first gate insulating film into an island-shaped oxide semiconductor film and an island-shaped first gate insulating film;
forming a second gate insulating film by a plasma chemical vapor deposition method by using a deposition gas comprising silicon hydride and oxygen over the insulating film, the source electrode layer, the drain electrode layer, the island-shaped oxide semiconductor film, and the island-shaped first gate insulating film; and
forming a gate electrode layer over the second gate insulating film,
wherein the island-shaped first gate insulating film includes a silicon oxide film containing fluorine,
wherein the second gate insulating film includes a silicon oxide film containing hydrogen, and
wherein a hydrogen concentration of the second gate insulating film is higher than a hydrogen concentration of the island-shaped first gate insulating film.
2. The manufacturing method of a semiconductor device according to claim 1 , wherein the island-shaped first gate insulating film is formed by using a deposition gas containing the silicon fluoride and dinitrogen monoxide by a plasma chemical vapor deposition method.
3. The manufacturing method of a semiconductor device according to claim 1 , wherein the second gate insulating film is formed by using a deposition gas containing the silicon hydride and dinitrogen monoxide by a plasma chemical vapor deposition method.
4. The manufacturing method of a semiconductor device according to claim 1 , wherein the oxide semiconductor film is formed by a sputtering method.
5. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the first gate insulating film is processed into the island-shaped first gate insulating film by dry etching, and
wherein the oxide semiconductor film is processed into the island-shaped oxide semiconductor film by wet etching with use of the island-shaped first gate insulating film as a mask.
6. A manufacturing method of a semiconductor device, comprising the steps of:
forming an insulating film by a plasma chemical vapor deposition method with use of a deposition gas containing silicon fluoride and oxygen;
forming a source electrode layer and a drain electrode layer over the insulating film;
forming an oxide semiconductor film covering the insulating film, the source electrode layer, and the drain electrode layer;
forming a first gate insulating film over and in contact with the oxide semiconductor film by a plasma chemical vapor deposition method by using a deposition gas containing silicon fluoride and oxygen;
processing the oxide semiconductor film and the first gate insulating film into an island-shaped oxide semiconductor film and an island-shaped first gate insulating film;
forming a second gate insulating film by a plasma chemical vapor deposition method with use of a deposition gas comprising silicon hydride and oxygen over the insulating film, the source electrode layer, the drain electrode layer, the island-shaped oxide semiconductor film, and the island-shaped first gate insulating film; and
forming a gate electrode layer over the second gate insulating film,
wherein the island-shaped first gate insulating film includes a silicon oxide film containing fluorine,
wherein the second gate insulating film includes a silicon oxide film containing hydrogen, and
wherein a hydrogen concentration of the second gate insulating film is higher than a hydrogen concentration of the island-shaped first gate insulating film.
7. The manufacturing method of a semiconductor device according to claim 6 , wherein the insulating film is formed by using a deposition gas containing the silicon fluoride and dinitrogen monoxide by a plasma chemical vapor deposition method.
8. The manufacturing method of a semiconductor device according to claim 6 , wherein the island-shaped first gate insulating film is formed by using a deposition gas containing the silicon fluoride and dinitrogen monoxide by a plasma chemical vapor deposition method.
9. The manufacturing method of a semiconductor device according to claim 6 , wherein the second gate insulating film is formed by using a deposition gas containing the silicon hydride and dinitrogen monoxide by a plasma chemical vapor deposition method.
10. The manufacturing method of a semiconductor device according to claim 6 , wherein the oxide semiconductor film is formed by a sputtering method.
11. The manufacturing method of a semiconductor device according to claim 6 ,
wherein the first gate insulating film is processed into the island-shaped first gate insulating film by dry etching, and
wherein the oxide semiconductor film is processed into the island-shaped oxide semiconductor film by wet etching with use of the island-shaped first gate insulating film as a mask.
12. A manufacturing method of a semiconductor device, comprising the steps of:
forming an insulating film by a plasma chemical vapor deposition method with use of a deposition gas containing silicon fluoride and oxygen;
forming an oxide semiconductor film comprising a channel over and in contact with the insulating film;
forming a first gate insulating film over and in contact with the oxide semiconductor film by a plasma chemical vapor deposition method by using a deposition gas containing silicon fluoride and oxygen; and
forming a second gate insulating film by a plasma chemical vapor deposition method by using a deposition gas comprising silicon hydride and oxygen over the insulating film, the oxide semiconductor film, and the first gate insulating film,
wherein the first gate insulating film includes a silicon oxide film containing fluorine,
wherein the second gate insulating film includes a silicon oxide film containing hydrogen, and
wherein a hydrogen concentration of the second gate insulating film is higher than a hydrogen concentration of the first gate insulating film.
13. The manufacturing method of a semiconductor device according to claim 12 , further comprising a step of:
forming a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film.
14. The manufacturing method of a semiconductor device according to claim 13 , wherein the oxide semiconductor film is over the source electrode layer and the drain electrode layer.
15. The manufacturing method of a semiconductor device according to claim 12 , further comprising a step of:
forming a gate electrode layer overlapping with the oxide semiconductor film.
16. The manufacturing method of a semiconductor device according to claim 15 , wherein the gate electrode layer is over the oxide semiconductor film.
17. The manufacturing method of a semiconductor device according to ciaim 12 , further comprising a step of:
heating the oxide semiconductor film, so that the oxide semiconductor film is dehydrated or dehydrogenated.
18. The manufacturing method of a semiconductor device according to claim 12 , further comprising a step of:
heating the insulating film, so that the insulating film is dehydrated or dehydrogenated.
19. The manufacturing method of a semiconductor device according to claim 18 , wherein a temperature of the step of heating is higher than or equal to 250° C. and lower than or equal to 750° C.
20. A manufacturing method of a semiconductor device, comprising the steps of:
forming an insulating film by a plasma chemical vapor deposition method with use of a deposition gas containing silicon fluoride and oxygen;
forming an oxide semiconductor film comprising a channel over and in contact with the insulating film;
processing the oxide semiconductor film into an island-shaped oxide semiconductor film;
forming a first gate insulating film over and in contact with the island-shaped oxide semiconductor film by a plasma chemical vapor deposition method by using a deposition gas containing silicon fluoride and oxygen; and
forming a second gate insulating film by a plasma chemical vapor deposition method by using a deposition gas comprising silicon hydride and oxygen over the insulating film, the island-shaped oxide semiconductor film, and the first gate insulating film,
wherein the first gate insulating film includes a silicon oxide film containing fluorine,
wherein the second gate insulating film includes a silicon oxide film containing hydrogen, and
wherein a hydrogen concentration of the second gate insulating film is higher than a hydrogen concentration of the first gate insulating film.
21. The manufacturing method of a semiconductor device according to claim 20 , further comprising a step of:
forming a source electrode layer and a drain electrode layer electrically connected to the island-shaped oxide semiconductor film.
22. The manufacturing method of a semiconductor device according to claim 21 , wherein the island-shaped oxide semiconductor film is over the source electrode layer and the drain electrode layer.
23. The manufacturing method of a semiconductor device according to claim 20 , further comprising a step of:
forming a gate electrode layer overlapping with the island-shaped oxide semiconductor film.
24. The manufacturing method of a semiconductor device according to claim 23 , wherein the gate electrode layer is over the island-shaped oxide semiconductor film.
25. The manufacturing method of a semiconductor device according to claim 20 , further comprising a step of:
heating the island-shaped oxide semiconductor film, so that the island-shaped oxide semiconductor film is dehydrated or dehydrogenated.
26. The manufacturing method of a semiconductor device according to claim 25 , wherein a temperature of the step of heating is higher than or equal to 250° C. and lower than or equal to 750° C.
27. A manufacturing method of a semiconductor device, comprising the steps of:
forming an oxide semiconductor film;
forming a first insulating film over and in contact with the oxide semiconductor film by a plasma chemical vapor deposition method by using a deposition gas containing silicon fluoride and oxygen; and
forming a second insulating film by a plasma chemical vapor deposition method by using a deposition gas comprising silicon hydride and oxygen over the first insulating film and the oxide semiconductor film,
wherein the first insulating film includes a silicon oxide film containing fluorine,
wherein the second insulating film includes a silicon oxide film containing hydrogen, and
wherein a hydrogen concentration of the second insulating film is higher than a hydrogen concentration of the first insulating film, wherein processing the oxide semiconductor film and the first insulating film into an island-shaped oxide semiconductor film and an island-shaped first insulating film are conducting before forming the second insulating film.
28. The manufacturing method of a semiconductor device according to claim 27 , further comprising a step of:
forming a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film.