Electro-optical display device and display method thereof
View Patent ↗A method of reducing power consumption of an electro-optical display device which can display a still image with the use of analog signals. A circuit in which low leakage current flows between a source and a drain of a selection transistor when the selection transistor is off; the source of the selection transistor is connected to a gate of a first driving transistor, a gate of a second driving transistor, and one electrode of a display element; and a source of the second driving transistor is connected to the other electrode of the display element is provided in each pixel. A gate and the drain of the selection transistor are connected to a scan line and a signal line, respectively. A drain of the first driving transistor is connected to a first power supply line. A drain of the second driving transistor is connected to a second power supply line.
1. An electro-optical display device comprising a pixel, the pixel comprising:
a first transistor including an oxide semiconductor containing indium in its channel;
a second transistor including silicon in its channel;
a third transistor including silicon in its channel;
a capacitor; and
a display element,
wherein a source of the first transistor is electrically connected to a gate of the second transistor, a gate of the third transistor, and one electrode of the capacitor,
wherein a source of the second transistor is electrically connected to one electrode of the display element,
wherein a drain of the second transistor and the other electrode of the capacitor are electrically connected to a capacitor line,
wherein a source of the third transistor is electrically connected to the other electrode of the display element,
wherein a gate of the first transistor is electrically connected to a scan line,
wherein a drain of the first transistor is electrically connected to a signal line,
wherein the second transistor and the third transistor have the same conductivity type,
wherein a leakage current of the first transistor is less than or equal to 1×10 −20 A at a temperature of 25° C.,
wherein an off-state current of the first transistor is less than or equal to 1/100 of a leakage current of the display element, and
wherein a capacitance of the capacitor is less than or equal to 1/10 of a capacitance of the display element.
2. The electro-optical display device according to claim 1 , wherein a drain of the third transistor is connected to a second power supply line.
3. The electro-optical display device according to claim 1 , wherein the drain of the third transistor is connected to a capacitor line in a subsequent row or a subsequent column.
4. The electro-optical display device according to claim 1 , wherein the first transistor is an N-channel transistor.
5. The electro-optical display device according to claim 1 , wherein a frame period is longer than or equal to 100 seconds.
6. The electro-optical display device according to claim 1 , wherein time for writing of one screen is shorter than or equal to 0.2 milliseconds.
7. An electro-optical display device comprising a pixel, the pixel comprising:
a selection transistor including an oxide semiconductor containing indium it its channel;
a first driving transistor including silicon in its channel;
a second driving transistor including silicon in its channel;
a capacitor; and
a display element comprising a first electrode and a second electrode,
wherein a source of the selection transistor is electrically connected to a gate of the first driving transistor, a gate of the second driving transistor and one electrode of the capacitor,
wherein a source of the first driving transistor is electrically connected to the first electrode,
wherein a source of the second driving transistor is electrically connected to the second electrode,
wherein a drain of the second driving transistor and the other electrode of the capacitor are electrically connected to a capacitor line,
wherein a gate of the selection transistor is electrically connected to a scan line,
wherein a drain of the selection transistor is electrically connected to a signal line,
wherein the first driving transistor and the second driving transistor have the same conductivity type,
wherein a leakage current of the first transistor is less than or equal to 1×10 −20 A at a temperature of 25° C., and
wherein an off-state current of the selection transistor is less than or equal to 1/100 of a leakage a current of the display element.
8. The electro-optical display device according to claim 7 , wherein the display element is a liquid crystal display element.
9. The electro-optical display device according to claim 7 , wherein a display mode of the electro-optical display device is in-plane switching.
10. The electro-optical display device according to claim 7 , wherein a display mode of the electro-optical display device is fringe field switching.
11. An electro-optical display device comprising a pixel, the pixel comprising:
a selection transistor including an oxide semiconductor containing indium it its channel;
a first driving transistor including silicon in its channel;
a second driving transistor including silicon in its channel;
a capacitor; and
a display element comprising a first electrode and a second electrode,
wherein a source of the selection transistor is electrically connected to a gate of the first driving transistor, a gate of the second driving transistor and one electrode of the capacitor,
wherein a source of the first driving transistor is electrically connected to the first electrode,
wherein a source of the second driving transistor is electrically connected to the second electrode,
wherein a drain of the second driving transistor and the other electrode of the capacitor are electrically connected to a capacitor line,
wherein a gate of the selection transistor is electrically connected to a scan line,
wherein a drain of the selection transistor is electrically connected to a signal line,
wherein the first driving transistor and the second driving transistor have the same conductivity type,
wherein a leakage current of the first transistor is less than or equal to 1×10 −20 A at a temperature of 25° C., and
wherein a capacitance of the capacitor is less than or equal to 1/10 of a capacitance of the display element.
12. The electro-optical display device according to claim 11 , wherein the display element is a liquid crystal display element.
13. The electro-optical display device according to claim 11 , wherein a display mode of the electro-optical display device is in-plane switching.
14. The electro-optical display device according to claim 11 , wherein a display mode of the electro-optical display device is fringe field switching.
15. The electro-optical display device according to claim 1 , further comprising a driver circuit for driving the pixel, wherein the driver circuit comprises a fourth transistor including polycrystalline silicon.
16. The electro-optical display device according to claim 7 , further comprising a driver circuit for driving the pixel, wherein the driver circuit comprises a fourth transistor including polycrystalline silicon.
17. The electro-optical display device according to claim 11 , further comprising a driver circuit for driving the pixel, wherein the driver circuit comprises a fourth transistor including polycrystalline silicon.