IP Library Granted Patent US 8,872,604
Granted Patent B2
US 8,872,604 · App. 13/101,376 · Granted Oct 28, 2014

Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor

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Quick Facts
Patent No.
US 8,872,604
App. No.
13/101,376
Granted
Oct 28, 2014
Kind
B2
Abstract

A device includes: a first electrode having a first electrode thickness; a first acoustic propagation layer disposed on the first electrode, the first piezo-electric layer having a first acoustic propagation layer thickness; a second electrode having a second electrode thickness; a second piezo-electric layer disposed on the first electrode, the second piezo-electric layer having a second acoustic propagation layer thickness; and a third electrode having a third electrode thickness, wherein the second electrode thickness is between 1.15 and 1.8 times the first electrode thickness. The first and third electrode thicknesses may be equal to each other, and the first and second piezo-electric layer thicknesses may be equal to each other. The first and third electrodes may be connected together to provide two acoustic resonators in parallel with each other.

Claims (26)

1. A device, comprising:

a first terminal;

a first acoustic resonator comprising a first electrode, a second electrode, and a first piezo-electric layer extending between the first and second electrodes;

a second acoustic resonator comprising the second electrode, a third electrode, and a second piezo-electric layer extending between the second and third electrodes; and

a second terminal,

wherein the first terminal is connected to the first and third electrodes and the second terminal is connected to the second electrode such that the first and second acoustic resonators are configured to be in parallel with each other, and

wherein a thickness of the second electrode is greater than a thickness of the first electrode and less than or equal to approximately 1.8 times the thickness of the first electrode.

2. The device of claim 1 , wherein a thickness of the third electrode is equal to the thickness of the first electrode.

3. The device of claim 1 , wherein the thickness of the second electrode is between approximately 1.15 and approximately 1.25 times the thickness of the first electrode.

4. The device of claim 1 , wherein the thickness of the second electrode is approximately 1.20 times the thickness of the first electrode.

5. The device of claim 1 , further comprising a passivation layer disposed on the third electrode.

6. The device of claim 1 , further comprising a substrate having a cavity disposed in a surface thereof, wherein the first and second acoustic resonators are disposed on the substrate above the cavity.

7. The device of claim 1 , wherein a thickness of the first piezo-electric layer equals a thickness of the second piezo-electric layer.

8. A device, comprising:

a first electrode having a first electrode thickness;

a first piezo-electric layer disposed on the first electrode, the first piezo-electric layer having a first piezo-electric layer thickness;

a second electrode disposed on the first piezo-electric layer and having a second electrode thickness;

a second piezo-electric layer disposed on the second electrode, the second piezo-electric layer having a second piezo-electric layer thickness; and

a third electrode disposed on the second piezo-electric layer and having a third electrode thickness,

wherein the second electrode thickness is between approximately 1.15 and approximately 1.25 times the thickness of the first electrode.

9. The device of claim 8 , wherein the third electrode thickness is equal to the first electrode thickness.

10. The device of claim 8 , wherein the second electrode thickness is approximately 1.20 times the first electrode thickness.

11. The device of claim 10 , wherein the first piezo-electric layer thickness equals the second piezo-electric layer thickness.

12. The device of claim 10 , further comprising at least one acoustic termination structure disposed on the third electrode along a periphery of the device.

13. The device of claim 10 , further comprising a bridge disposed beneath the second electrode along a periphery of the device.

14. The device of claim 8 , further comprising a substrate having a cavity disposed in a surface thereof, wherein the first electrode is disposed on the substrate above the cavity.

Assignments (9)
CORRECTIVE ASSIGNMENT TO CORRECT THE PATENT NUMBER 9,385,856 TO 9,385,756 PREVIOUSLY RECORDED AT REEL: 47349 FRAME: 001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Mar 22, 2019
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 051144/0648 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE PREVIOUSLY RECORDED ON REEL 047229 FRAME 0408. ASSIGNOR(S) HEREBY CONFIRMS THE THE EFFECTIVE DATE IS 09/05/2018. Recorded Oct 29, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047349/0001 →
MERGER Recorded Oct 4, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047229/0408 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032851-0001) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →
MERGER Recorded May 7, 2013
From: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 030369/0471 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 5, 2011
From: BURAK, DARIUSZ; FENG, CHRIS; SHIRAKAWA, ALEXANDRE; BADER, STEFAN
To: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
Reel/Frame 026230/0610 →