Semiconductor light emitting component and method for manufacturing the same
A method for manufacturing a semiconductor light emitting component is disclosed in the present invention. First, a substrate is provided and an epitaxial structure is formed thereon, wherein a first surface of the epitaxial structure contacts the substrate. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. A first electrode is then formed on a second surface of the first type doped layer. Subsequently, a functional structure is formed on the first electrode using an in-situ method. Afterwards, the substrate is removed to expose the epitaxial structure. Finally, an etching step is performed to etch the exposed epitaxial structure, so as to expose at least a portion of the first electrode.
1. A semiconductor light emitting component, comprising:
an epitaxial structure comprising a first type doped layer, a light emitting portion and a second type doped layer;
a first electrode formed on a surface of said first type doped layer;
a second electrode formed on a surface of said second type doped layer;
a functional structure formed on said first electrode using an in-situ method; and
a first cutout structure formed in said first type doped layer to expose at least a portion of the first electrode; and
a second cutout structure formed in said first type doped layer, said light emitting portion and said second type doped layer so as to expose at least a portion of said second electrode.
2. The semiconductor light emitting component of claim 1 , wherein said first type doped layer is an n-type layer and said second type doped layer is a p-type layer.
3. The semiconductor light emitting component of claim 1 , wherein said first type doped layer is a p-type layer and said second type doped layer is an n-type layer.
4. The semiconductor light emitting component of claim 1 , wherein said functional structure comprises:
an insulating layer formed on said first electrode using the in-situ method;
a reflective layer formed on said insulating layer using the in-situ method;
a seed layer formed on said reflective layer using the in-situ method; and
a permanent layer formed on said seed layer using the in-situ method.
5. The semiconductor light emitting component of claim 1 , wherein said functional structure comprises:
an insulating layer formed on said first electrode using the in-situ method;
a reflective layer formed on said insulating layer using the in-situ method; and
a permanent layer formed on said reflective layer using the in-situ method.
6. The semiconductor light emitting component of claim 1 , wherein said functional structure comprises:
an insulating reflective layer formed on said first electrode using the in-situ method; and
a permanent layer formed on said insulating reflective layer using the in-situ method.
7. A light emitting component, comprising:
an epitaxial structure comprising a first doped layer, a light emitting portion and a second doped layer;
a first electrode formed on a surface of said first doped layer;
a functional structure formed on said first electrode;
a first cutout structure formed in said first doped layer to expose at least a portion of said first electrode;
a second electrode formed on a surface of said second doped layer; and
a second cutout structure formed in said first doped layer, said light emitting portion and said second type doped layer so as to expose at least a portion of said second electrode;
wherein said light emitting component provides ultra-low shade effects.
8. The light emitting component of claim 7 , wherein said functional structure further comprises:
an insulating reflective layer formed on said first electrode using the in-situ method; and
a permanent layer formed on said insulating reflective layer using the in-situ method.
9. The light emitting component of claim 8 , wherein said functional structure further comprises:
a reflective layer formed on said insulating layer using the in-situ method; and a seed layer formed on said reflective layer using the in-situ method.