Passive type image sensor and method including first and second anti-blooming transistors discharging electric charges while integrating electric charges
A passive type image sensor and a method for operating the same. The passive type image sensor includes a photoelectric conversion section configured to receive light and integrate electric charges; a transfer section configured to transmit the integrated electric charges; an output section configured to received integrated electric charges from the transfer section and amplify and output the amplified electric charges; and an electric charge discharging section configured to discharge the electric charges flowing from the photoelectric conversion section to a common node through the transfer section while integrating the electric charge integration in the photoelectric conversion section.
1. A passive type image sensor comprising:
a photoelectric conversion section configured to receive light and integrate electric charges;
a transfer section configured to transmit the integrated electric charges;
an output section configured to receive integrated electric charges from the transfer section, amplify the received electric charges, and output the amplified electric charges; and
an electric charge discharging section configured to activate a first anti-blooming transistor and inactivate a second anti-blooming transistor, wherein the first anti-blooming transistor and the second anti-blooming transistor are configured to discharge the electric charges flowing from the photoelectric conversion section to a common node through the transfer section while integrating the electric charges in the photoelectric conversion section.
2. The passive type image sensor of claim 1 , wherein:
the first anti-blooming transistor is comprised in a first electric charge discharge switching element connected to the output section; and
the second anti-blooming transistor is comprised in a second electric charge discharge switching element connected to a common node that is disposed between the first electric charge discharge switching element and the transfer section.
3. The passive type image sensor of claim 2 , wherein the electric charge discharging section discharges the electric charges when the first electric charge discharge switching element is turned off and the second electric charge discharge switching element is turned on.
4. The passive type image sensor of claim 3 , wherein the first electric charge discharge switching element and the second electric charge discharge switching element each include at least one transistor.
5. The passive type image sensor of claim 4 , wherein the second electric charge discharge switching element is connected in a diode-connection fashion.
6. The passive type image sensor of claim 1 , wherein the output section comprises:
a reset switching element configured to reset the photoelectric conversion section; and
an amplification element configured to amplify the electric charges from the photoelectric conversion section.
7. The passive type image sensor of claim 1 , wherein:
the photoelectric conversion section comprises a photodiode; and
the transfer section and the electric charge discharging section comprises at least one transistor.
8. A passive type image sensor comprising:
a first photosensitive pixel configured to include a first photoelectric conversion section for receiving light and integrating electric charges and a first transfer section for transmitting the integrated electric charges to a common node;
a second photosensitive pixel configured to include a second photoelectric conversion section for receiving light and integrating electric charges and a second transfer section for transmitting the integrated electric charges to the common node;
an output section configured to amplify the electric charges from the first photoelectric conversion section and/or the second photoelectric conversion section and output amplified electric charges through the common node; and
an electric charge discharging section configured to activate a first anti-blooming transistor and inactivate a second anti-blooming transistor, wherein the first anti-blooming transistor and the second anti-blooming transistor are configured to discharge the electric charges flowing from the first photoelectric conversion section or the second photoelectric conversion section to the common node through the transfer section while integrating the electric charges in the first photoelectric conversion section or the second photoelectric conversion section.
9. The passive type image sensor of claim 8 , wherein:
the first anti-blooming transistor is comprised in a first electric charge discharge switching element electrically connected to the output section; and
the second anti-blooming transistor is comprised in a second electric charge discharge switching element electrically connected to the common node between the first electric charge discharge switching element and the transfer section.
10. The passive type image sensor of claim 9 , wherein the electric charge discharging section discharges the electric charges when the first electric charge discharge switching element is turned off and the second electric charge discharge switching element is turned on.
11. The passive type image sensor of claim 10 , wherein the first electric charge discharge switching element and the second electric charge discharge switching element each include at least one transistor.
12. The passive type image sensor of claim 11 , wherein the second electric charge discharge switching element is electrically connection in a diode connection fashion.
13. The passive type image sensor of claim 8 , wherein the output section comprises:
a reset switching element configured to reset the first photoelectric conversion section and the second photoelectric conversion section; and
an amplification element configured to amplify the electric charges from the first photoelectric conversion section and the second photoelectric conversion section.
14. The passive type image sensor of claim 8 , wherein the first photoelectric conversion section and the second photoelectric conversion section each include photodiodes.
15. The passive type image sensor of claim 14 , wherein the first transfer section, the second transfer section, and the electric charge discharging section each include at least one transistor.
16. A method of operating a passive type image sensor, the method comprising:
integrating electric charges in a photoelectric conversion element;
discharging a current flowing through a transfer transistor while integrating the electric charges in the photoelectric conversion element by activating a first anti-blooming transistor and inactivating a second anti-blooming transistor, wherein the first anti-blooming transistor and the second anti-blooming transistor are configured to discharge electric charges flowing from the photoelectric conversion element to a common node through the transfer transistor while integrating the electric charges in the photoelectric conversion element;
outputting a voltage on a common node as a reference voltage; and then
outputting electric charges in the photoelectric conversion element as a sensing voltage by inactivating the first anti-blooming transistor, activating the second anti-blooming transistor, and activating the transfer transistor.
17. The method of claim 16 , further comprising:
resetting the photoelectric conversion element through an output section.
18. The method of claim 17 , wherein resetting the photoelectric conversion element through the output section occurs before integrating the electric charges in the photoelectric conversion element.