Semiconductor device with respective electrode pad rows and respective external electrodes electrically connected and arranged in the respective end portions of the substrate

1. A semiconductor device comprising:

a substrate having an upper surface and a lower surface opposite to the upper surface, the substrate being defined by first and second sides opposite to each other and by third and fourth sides opposite to each other, the substrate further comprising a plurality of first and second bond fingers and a plurality of first and second lands, the plurality of first and second bond fingers each including a plurality of first and second input/output (I/O) bond fingers, and the plurality of first and second lands each including a plurality of first and second I/O lands;

a first semiconductor chip stacked on the upper surface of the substrate, the first semiconductor chip having a first end portion near the first side of the substrate and a second end portion near the second side of the substrate, the first semiconductor chip comprising a plurality of first electrode pads disposed along a line extending between the first and second end portions of the first semiconductor chip and being parallel to the third and fourth sides of the substrate, the plurality of first electrode pads including a plurality of first I/O electrode pads and a plurality of first command and address (CA) electrode pads, the plurality of first I/O electrode pads arranged on the first end portion;

each one of the plurality of first I/O bond fingers being connected to a corresponding one of the plurality of first I/O electrode pads, the plurality of first I/O bond fingers arranged next to the first I/O electrode pads and arranged near the first side of the substrate;

each one of the plurality of first I/O lands being connected to a corresponding one of the plurality of first I/O bond fingers, the plurality of first I/O lands arranged next to the plurality of first I/O bond fingers and arranged near the first side of the substrate;

a second semiconductor chip stacked on the first semiconductor chip, the second semiconductor chip having a third end portion near the first side of the substrate and a fourth end portion near the second side of the substrate, the second semiconductor chip comprising a plurality of second electrode pads disposed along a line extending between the third and fourth end portions of the second semiconductor chip and being parallel to the third and fourth sides of the substrate, the plurality of second electrode pads including a plurality of second I/O electrode pads and a plurality of second CA electrode pads, the plurality of second I/O electrode pads arranged on the fourth end portion;

each one of the plurality of second I/O bond fingers being connected to a corresponding one of the plurality of second I/O electrode pads, the plurality of second I/O bond fingers arranged next to the second I/O electrode pads and arranged near the second side of the substrate; and

each one of the plurality of second I/O lands being connected to a corresponding one of the plurality of second I/O bond fingers, the plurality of second I/O lands arranged next to the plurality of second I/O bond fingers and arranged near the second side of the substrate, wherein

an edge of the first end portion of the first semiconductor chip substantially aligns with an edge of the third end portion of the second semiconductor chip in a stacking direction of the first and second semiconductor chips.

2. The semiconductor device according to claim 1 , further comprising:

a rectangular opening formed in the substrate, the rectangular opening being arranged along a center line between the first and the second sides of the substrate, and being parallel to the third and fourth sides of the substrate.

3. The semiconductor device according to claim 2 , wherein the plurality of first bond fingers are arranged on the lower surface of the substrate on both sides of and near edges of the rectangular opening.

4. The semiconductor device according to claim 1 , wherein the plurality of second bond fingers are arranged on the upper surface of the substrate in two rows near the third and fourth sides of the substrate.

5. The semiconductor device according to claim 2 , wherein:

the plurality of first electrode pads are disposed on a surface of the first semiconductor chip facing the substrate and arranged inside the rectangular opening; and

the plurality of second electrode pads are disposed on an upper surface of the second semiconductor chip opposing the first semiconductor chip.

6. The semiconductor device according to claim 1 , wherein:

the plurality of first bond fingers further include a plurality of first CA bond fingers, each one of the plurality of first CA bond fingers being connected to a corresponding one of the plurality of first CA electrode pads, the plurality of first CA bond fingers arranged next to the first CA electrode pads and arranged near the second side of the substrate; and

the plurality of second bond fingers further include a plurality of second CA bond fingers, each one of the plurality of second CA bond fingers being connected to a corresponding one of the plurality of second CA electrode pads, the plurality of second CA bond fingers arranged next to the second CA electrode pads and arranged near the first side of the substrate.

7. The semiconductor device according to claim 6 , wherein:

the plurality of first CA electrode pads on the first semiconductor chip are coupled to a corresponding one of the plurality of first CA bond fingers; and

the plurality of second CA electrode pads on the second semiconductor chip are coupled to a corresponding one of the plurality of second CA bond fingers.

8. The semiconductor device according to claim 1 , wherein:

the plurality of first I/O lands are arranged for I/O signal wirings from the first semiconductor chip; and

the plurality of second I/O lands are arranged for I/O signal wirings from the second semiconductor chip.

9. The semiconductor device according to claim 8 , wherein the I/O signal wirings from the first semiconductor chip are substantially equal in length with that of the I/O signal wirings from the second semiconductor chip.

10. The semiconductor device according to claim 1 , wherein the first semiconductor chip is bonded to the substrate by means of adhesive member.

11. The semiconductor device according to claim 2 , further comprising an encapsulation element covering the upper surface of the substrate, the first and the second semiconductor chips, and the rectangular opening.

12. The semiconductor device according to claim 1 , wherein the plurality of first I/O electrode pads and the plurality of second I/O electrode pads are each arranged in one row on the first semiconductor chip and the second semiconductor chip respectively.

13. The semiconductor device according to claim 1 , wherein the plurality of first I/O electrode pads and the plurality of second I/O electrode pads are each arranged in two rows on the first semiconductor chip and the second semiconductor chip respectively, the two rows being in parallel with the third and fourth sides of the substrate.

14. The semiconductor device according to claim 13 , wherein a rectangular opening is formed in the substrate, the rectangular opening being arranged along a center line between the first and the second sides of the substrate, and being parallel to the third and fourth sides of the substrate.

15. The semiconductor device according to claim 14 , wherein:

the plurality of first bond fingers are arranged on the lower surface of the substrate on both sides of and near edges of the rectangular opening; and

the plurality of second bond fingers are arranged on the upper surface of the substrate in two rows near the third and fourth sides of the substrate.

16. The semiconductor device according to claim 14 , wherein:

the plurality of first electrode pads are disposed on a surface of the first semiconductor chip facing the substrate and arranged inside the rectangular opening; and

the plurality of second electrode pads are disposed on an upper surface of the second semiconductor chip opposing the first semiconductor chip.

17. The semiconductor device according to claim 13 , wherein:

the plurality of first bond fingers further include a plurality of first CA bond fingers, each one of the plurality of first CA bond fingers being connected to a corresponding one of the plurality of first CA electrode pads, the plurality of first CA bond fingers arranged next to the first CA electrode pads and arranged near the second side of the substrate; and

the plurality of second bond fingers further include a plurality of second CA bond fingers, each one of the plurality of second CA bond fingers being connected to a corresponding one of the plurality of second CA electrode pads, the plurality of second CA bond fingers arranged next to the second CA electrode pads and arranged near the first side of the substrate.

18. The semiconductor device according to claim 13 , wherein:

the plurality of first I/O lands are arranged for I/O signal wirings from the first semiconductor chip;

the plurality of second I/O lands are arranged for I/O signal wirings from the second semiconductor chip; and

the I/O signal wirings from the first semiconductor chip are substantially equal in length with that of the I/O signal wirings from the second semiconductor chip.

19. The semiconductor device according to claim 13 , wherein the first semiconductor chip is bonded to the substrate by means of adhesive member.

20. The semiconductor device according to claim 14 , further comprising an encapsulation element covering the upper surface of the substrate, the first and the second semiconductor chips, and the rectangular opening.