Three-dimensional semiconductor memory device and method for manufacturing the same
A three-dimensional semiconductor memory device includes a stacked structure including a plurality of conductive patterns, an active pillar penetrating the stacked structure, and a data storage pattern between the active pillar and the conductive patterns, wherein the active pillar includes a vertical semiconductor pattern penetrating the stacked structure and protruding semiconductor patterns between the vertical semiconductor pattern and the data storage pattern, the protruding semiconductor patterns having a different crystalline structure from that of the vertical semiconductor pattern.
1. A three-dimensional semiconductor memory device, comprising:
a stacked structure including a plurality of conductive patterns;
an active pillar penetrating the stacked structure; and
a data storage pattern between the active pillar and the conductive patterns,
wherein the active pillar includes a vertical semiconductor pattern penetrating the stacked structure and protruding semiconductor patterns between the vertical semiconductor pattern and the data storage pattern, the protruding semiconductor patterns having a different crystalline structure from that of the vertical semiconductor pattern.
2. The three-dimensional semiconductor memory device as claimed in claim 1 , wherein the active pillar includes a discontinuous boundary surface between the vertical semiconductor pattern and the protruding semiconductor patterns.
3. The three-dimensional semiconductor memory device as claimed in claim 1 , wherein a mean grain size in the protruding semiconductor pattern is larger than the mean grain size in the vertical semiconductor pattern.
4. The three-dimensional semiconductor memory device as claimed in claim 1 , wherein the stacked structure includes insulation patterns between the conductive patterns, the vertical semiconductor pattern including a first thickness adjacent to the insulation patterns and a second thickness, thicker than the first thickness, adjacent to the conductive pattern.
5. The three-dimensional semiconductor memory device as claimed in claim 1 , wherein the protruding semiconductor patterns have ring shapes surrounding the vertical semiconductor pattern.
6. The three-dimensional semiconductor memory device as claimed in claim 1 , wherein the vertical semiconductor pattern has a hollow cylinder shape or a pillar shape.
7. The three-dimensional semiconductor memory device as claimed in claim 1 , wherein the data storage pattern includes a plurality of data storage patterns at least partially separated from each other along a vertical direction.
8. The three-dimensional semiconductor memory device as claimed in claim 7 , wherein the data storage pattern further comprises:
a gate insulation layer contacting the protruding semiconductor pattern;
an inter-gate insulation layer contacting the conductive pattern; and
a floating gate electrode between the gate insulation layer and the inter-gate insulation layer.
9. The three-dimensional semiconductor memory device as claimed in claim 7 , wherein the data storage patterns are completely separated from each other, each data storage pattern extending along an upper surface and a lower surface of the protruding semiconductor pattern.
10. The three-dimensional semiconductor memory device as claimed in claim 7 , wherein the data storage patterns are completely separated from each other, each data storage pattern extending along an upper surface and a lower surface of the conductive pattern.