Method of detaching semi-conductor layers at low temperature

1. A method for reducing defects at a bonding interface when producing a structure having an ultra thin buried oxide (UTBOX) layer, which comprises:

assembling donor and receiver substrates at a bonding interface wherein at least one of the two substrates includes an insulating layer with the insulating layer(s) positioned between the substrates and having a total thickness of less than 50 nm;

conducting a first heat treatment for reinforcing the assembly at a temperature below 400° C., with the first heat treatment carried out during or after the assembling;

conducting a second heat treatment at a temperature above 900° C. after the first heat treatment; and

controlling exposure time of the assembly at temperatures between 400° C. and 900° C. to less than 1 minute to reduce defects at the bonding interface,

wherein the substrates are assembled by molecular bonding and the method comprises ramping the heating temperature between the first and second heat treatments at a rate of above 10° C./s.

2. The method according to claim 1 , which comprises ramping the heating temperature between the first and second heat treatments at a rate of above 50° C./s.

3. The method according to claim 1 , which comprises ramping the heating temperature between the first and second heat treatments at a minimum rate of 200° C./s or 300° C./s.

4. The method according to claim 1 , wherein the UTBOX layer is an oxide, a nitride or an oxynitride, the donor substrate comprises a material of silicon, silicon having a surface crystalline orientation of (1, 0, 0), (1, 1, 0) or (1, 1, 1), silicon carbide, germanium or gallium arsenide, and the receiver substrate comprises a material of silicon, quartz, or glass.

5. A method for reducing defects at a bonding interface when producing a structure having an ultra thin buried oxide (UTBOX) layer, which comprises:

assembling donor and receiver substrates at a bonding interface wherein at least one of the two substrates includes an insulating layer with the insulating layer(s) positioned between the substrates and having a total thickness of less than 50 nm;

conducting a first heat treatment for reinforcing the assembly at a temperature below 400° C., with the first heat treatment carried out during or after the assembling;

thinning the donor substrate after assembling, so as to leave on the receiver substrate only a thin film of the donor substrate;

conducting a second heat treatment at a temperature above 900° C. after the first heat treatment; and

controlling exposure time of the assembly at temperatures between 400° C. and 900° C. to less than 1 minute to reduce defects at the bonding interface;

wherein the second heat treatment is conducted after the thinning

6. The method according to claim 5 , wherein the UTBOX layer has a thickness of less than 25 nm and the thinning is carried out by a mechanical or mechanical-chemical method.

7. The method according to claim 5 , which further comprises conducting a heat treatment step for pre-weakening of the donor substrate prior to the assembling.

8. The method according to claim 5 , wherein the UTBOX layer has a thickness of 20 nm or less and the thinning is carried out by fracture of the donor substrate.

9. The method according to claim 5 , which comprises conducting the fracture by applying a heat treatment to the donor wafer at a temperature between 280° C. and 350° C.

10. The method according to claim 9 , wherein the first heat treatment for reinforcing the assembly and the fracture heat treatment are combined in a single heat treatment step.

11. The method according to claim 9 , wherein the fracture heat treatment is applied for a time of between one of 30 minutes and 15 h, between 30minutes and less than 5 h, or between 1 h and 3 h.

12. The method according to claim 5 , which further comprises immediately lowering the temperature of the first heat treatment after fracture of the donor substrate in order to limit the heat budget applied to the structure.

13. The method according to claim 5 , wherein the thickness of UTBOX layer is less than 5 nm to 15 nm and the fracture of the donor substrate is carried out by a heat treatment at a temperature below 250° C.

14. The method according to claim 5 , wherein the UTBOX layer is an oxide, a nitride or an oxynitride.

15. The method according to claim 5 , wherein the UTBOX layer is silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ), or silicon oxynitride (Si x O y N z ).

16. The method according to claim 5 , wherein the donor substrate comprises a material of silicon, silicon having a surface crystalline orientation of (1, 0, 0), (1, 1, 0) or (1, 1, 1), silicon carbide, germanium or gallium arsenide.

17. The method according to claim 5 , wherein the receiver substrate comprises a material of silicon, quartz, or glass.

18. The method according to claim 5 , wherein the UTBOX layer is an oxide, a nitride or an oxynitride, the donor substrate comprises a material of silicon, silicon having a surface crystalline orientation of (1, 0, 0), (1, 1, 0) or (1, 1, 1), silicon carbide, germanium or gallium arsenide, and the receiver substrate comprises a material of silicon, quartz, or glass.

19. A method for reducing defects at a bonding interface when producing a structure having an ultra thin buried oxide (UTBOX) layer, which comprises:

assembling donor and receiver substrates at a bonding interface wherein at least one of the two substrates includes an insulating layer with the insulating layer(s) positioned between the substrates and having a total thickness of less than 50 nm;

conducting a first heat treatment for reinforcing the assembly at a temperature below 400° C., with the first heat treatment carried out during or after the assembling;

conducting a second heat treatment at a temperature above 900° C. after the first heat treatment;

controlling exposure time of the assembly at temperatures between 400° C. and 900° C. to less than 1 minute to reduce defects at the bonding interface; and

thinning the insulating layer by treatment in an atmosphere having an oxygen concentration less than 1 ppm, and at a temperature substantially between 1100° C. and 1200° C.

20. The method according to claim 19 , wherein the UTBOX layer is an oxide, a nitride or an oxynitride, the donor substrate comprises a material of silicon, silicon having a surface crystalline orientation of (1, 0, 0), (1, 1, 0) or (1, 1, 1), silicon carbide, germanium or gallium arsenide, and the receiver substrate comprises a material of silicon, quartz, or glass.