INGOT FORMED FROM BASIC INGOTS, WAFER MADE FROM SAID INGOT AND ASSOCIATED METHOD
A method for manufacturing a heterostructure for use in applications in the electronics, optical and optoelectronics fields, by implanting atomic species inside a first substrate called “donor” substrate, so as to form an embrittlement area therein, assembling a second substrate, called “recipient” substrate, on the donor substrate, detaching the rear portion of the donor substrate along the embrittlement area, so as to customize a thin layer of interest on the recipient substrate, wherein the donor substrate is an ingot or an ingot section formed from at least two basic ingots assembled together along two of their respective complementary longitudinal surfaces.
1 .- 5 . (canceled)
6 . A method for manufacturing a heterostructure for use in applications in the electronics, optical and optoelectronics fields, which method comprises:
implanting atomic species inside a first substrate so as to form an embrittlement area therein,
assembling a second substrate on the first substrate, and
detaching a portion of the first substrate along the embrittlement area so as to transfer a thin layer of interest onto the second substrate,
wherein the first substrate is an ingot or ingot section formed from at least two basic ingots assembled together along two of their respective complementary longitudinal surfaces.
7 . The method of claim 6 , wherein the first substrate is an ingot formed from at least two basic ingots assembled together along two of their respective complementary longitudinal surfaces.
8 . The method of claim 6 , wherein the first substrate is an ingot section formed from at least two basic ingots assembled together along two of their respective complementary longitudinal surfaces
9 . The method of claim 6 , wherein at least one of the basic ingots is made of a monocrystalline or polycrystalline material.
10 . The method of claim 6 , wherein at least one of the basic ingots is a solid selected from cylinders, prisms, or polyhedra having a square, rectangular, triangular, pentagonal, hexagonal, heptagonal, octagonal, nonagonal, decagonal cross section, or a cross section in the shape of a circular segment.
11 . The method of claim 6 , wherein a plurality of elongated ingot sections are cut from primary ingots and are then assembled side by side to form the first substrate, with a cross section of the first substrate included a portion of each of the plurality of ingot sections.
12 . The method of claim 11 , wherein the first substrate is round or square and is made of four ingot sections.
13 . The method of claim 11 , wherein the first substrate is hexagonal and is made of six ingot sections.
14 . The method of claim 11 , wherein the ingot sections are assembled by being joined together using a bonding layer, molecular bonding, anodic bonding, or bonding by fusion.
15 . The method of claim 11 , wherein the first substrate is subjected to a heat treatment prior to assembly with the second substrate.
16 . The method of claim 15 , wherein the ingot sections are held in a press during application of the heat treatment.
17 . The method of claim 6 , wherein the materials of the basic ingots are selected from silicon, germanium, silicon carbide, gallium nitride, gallium arsenide, sapphire, glass, quartz, AIN, InP, LiTaO 3 , or LiNbO 3 .
18 . The method of claim 6 , wherein the second substrate is a silicon substrate.