High power semiconductor device for wireless applications and method of forming a high power semiconductor device
A high power semiconductor device for operation at powers greater than 5 watts for wireless applications comprises a semiconductor substrate including an active area of the high power semiconductor device, contact regions formed on the semiconductor substrate providing contacts to the active area of the high power semiconductor device, a dielectric layer formed over a part of the semiconductor substrate, a lead for providing an external connection to the high power semiconductor device and an impedance matching network formed on the semiconductor substrate between the active area of the high power semiconductor device and the lead. The impedance matching network includes conductor lines formed on the dielectric layer. The conductor lines are coupled to the contact regions for providing high power connections to the contact regions of the active area, and have a predetermined inductance for impedance matching.
1. A high power semiconductor device for operation at powers greater than 5 watts for wireless applications comprising:
a semiconductor substrate comprising a semiconductor material, said semiconductor substrate including an active area of the high power semiconductor device;
contact regions formed on the semiconductor substrate providing contacts to the active area of the high power semiconductor device;
a dielectric layer formed over a part of the semiconductor substrate;
a lead for providing an external connection to the high power semiconductor device;
an impedance matching network formed on the semiconductor substrate between the active area of the high power semiconductor device and the lead, wherein the impedance matching network includes conductor lines formed on the dielectric layer and being coupled to the contact regions for providing high power connections to the contact regions of the active area, the conductor lines having a predetermined inductance for impedance matching.
2. The high power semiconductor device according to claim 1 , wherein the conductor lines have a Q factor which is greater than 40 at device operating powers of greater than 5 Watts and at 2 GHz, with the predetermined inductance of at least one of the conductor lines being less than 1 nano Henry.
3. The high power semiconductor device according to claim 1 , wherein the conductor lines extend between the contact regions of the active area and the lead.
4. The high power semiconductor device according to claim 3 , wherein each of the conductor lines is arranged to have a predetermined shape extending over the dielectric layer, wherein the predetermined shape is selected to optimize the coupling between adjacent conductor lines so as to control the inductance of the conductor lines and provide the predetermined inductance.
5. The high power semiconductor device according to claim 1 , wherein the impedance matching network further comprises another impedance matching component formed on the semiconductor substrate between the lead and the contact regions, wherein the conductor lines extend at least between the contact regions and the another impedance matching component.
6. The high power semiconductor device according to claim 5 , wherein the impedance matching component includes a capacitor formed on the semiconductor substrate.
7. The high power semiconductor device according to claim 1 , wherein each of the conductor lines is arranged to have a predetermined shape extending over the dielectric layer, wherein the predetermined shape is selected to optimise the coupling between adjacent conductor lines so as to control the inductance of the conductor lines and provide the predetermined inductance.
8. The high power semiconductor device according to claim 1 , wherein the conductor lines extend over a portion of a top surface of the semiconductor substrate and do not extend beyond the top surface of the semiconductor substrate.
9. The high power semiconductor device according to claim 1 , further comprising conductive regions extending through the dielectric layer to the contact regions for coupling the conductor lines to the contact regions.
10. The high power semiconductor device according to claim 1 , further comprising a shielding layer formed between the semiconductor substrate and the dielectric layer.
11. The high power semiconductor device according to claim 10 , further comprising a conductive layer formed on a bottom surface of the semiconductor substrate and wherein the shielding layer is coupled to the conductive layer.
12. The high power semiconductor device according to claim 1 , wherein at least one of the conductor lines has a thickness greater than 30 microns.
13. A method of forming a high power semiconductor device for operation at powers greater than 5 watts for wireless applications comprising:
providing a semiconductor substrate comprising a semiconductor material, said semiconductor substrate including an active area of the high power semiconductor device and contact regions formed on the semiconductor substrate providing contacts to the active area of the high power semiconductor device;
forming a dielectric layer over part of the semiconductor substrate and contact regions;
forming an impedance matching network on the semiconductor substrate; and
forming a lead for providing an external connection to the high power semiconductor device, wherein the impedance matching network is formed between the active area of the high power semiconductor device and the lead, and wherein forming an impedance matching network comprises forming conductor lines on the dielectric layer coupled to the contact regions for providing high power connections to the contact regions of the active area, the conductor lines having a predetermined inductance for impedance matching.
14. The method according to claim 13 , wherein forming a plurality of conductor lines includes printing the plurality of conductor lines on the dielectric layer.
15. The method according to claim 14 , further comprising selecting configuration parameters of the dielectric layer and the conductor lines such that the conductor lines have a Q factor which is greater than 40 at 2 GHz, with the predetermined inductance of at least one of the conductor lines being less than 1 nano Henry, wherein the configuration parameters of the dielectric layer include permittivity of material forming the dielectric layer, a thickness of the dielectric layer and the loss tangent of the dielectric layer, and the configuration parameters of the conductor lines include resistivity of material forming the conductor lines and a cross-section area of the conductor lines.
16. The method according to claim 13 , further comprising selecting configuration parameters of the dielectric layer and the conductor lines such that the conductor lines have a Q factor which is greater than 40 at 2 GHz, with the predetermined inductance of at least one of the conductor lines being less than 1 nano Henry, wherein the configuration parameters of the dielectric layer include permittivity of material forming the dielectric layer, a thickness of the dielectric layer and the loss tangent of the dielectric layer, and the configuration parameters of the conductor lines include resistivity of material forming the conductor lines and a cross-section area of the conductor lines.
17. The method according to claim 16 , wherein the selecting configuration parameters of the dielectric layer and the conductor lines is dependent on resistivity of material forming the semiconductor substrate.
18. The method according to claim 13 , wherein forming conductor lines comprises forming conductor lines on the dielectric layer extending over a portion of a top surface of the semiconductor substrate and not extending beyond the top surface of the semiconductor substrate.
19. The method according to claim 13 , further comprising forming a shielding layer between the semiconductor substrate and the dielectric layer.
20. The method according to claim 19 , further comprising forming a conductive layer on a bottom surface of the semiconductor substrate and wherein the shielding layer is coupled to the conductive layer.