Semiconductor device and method of manufacturing the same
View Patent ↗A method of manufacturing of a semiconductor device ( 101 ) includes: a fine pattern forming step of forming p-type impurity regions ( 3, 4 ) and surface ohmic contact electrodes ( 5 ) using a stepper, after forming an N-type epitaxial layer ( 2 ) on a SiC single-crystal substrate ( 1 ); a protective film planarizing step of forming a protective film so as to cover the surface ohmic contact electrodes ( 5 ) and performing planarization of the protective film; a substrate thinning step of thinning the SiC single-crystal substrate ( 1 ); a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode ( 7 ) on the SiC single-crystal substrate ( 1 ); a surface Schottky contact electrode forming step of forming a Schottky metal portion ( 8 ) connected to the p-type impurity regions ( 3, 4 ) and the surface ohmic contact electrodes ( 5 ); and a step of forming a surface pad electrode ( 9 ) that covers the Schottky metal portion ( 8 ).
1. A method of manufacturing a semiconductor device, comprising:
a first fine pattern forming step comprising steps of forming an N-type epitaxial layer on the surface of a SiC single-crystal substrate, and then forming a p-type impurity region, which is made of fine patterns, in the surface of the N-type epitaxial layer using a photolithography method in which a stepper is used;
a second fine pattern forming step of forming a surface ohmic contact electrode, which is made of fine patterns, on the surface of the p-type impurity region using a photolithography method in which a stepper is used;
a protective film planarizing step of forming a protective film so as to cover the p-type impurity region and the surface ohmic contact electrode, and then performing planarization of the protective film;
a substrate thinning step of reducing the thickness of the SiC single-crystal substrate;
a backside ohmic contact electrode forming step of forming a backside ohmic contact electrode on the backside of the SiC single-crystal substrate;
a protective film removing step of removing the protective film;
a surface Schottky contact electrode forming step of forming a Schottky metal portion connected to the p-type impurity region and the surface ohmic contact electrode; and
a surface pad electrode forming step of forming a surface pad electrode so as to cover the Schottky metal portion after the surface Schottky contact electrode forming step.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the substrate thinning step is a step of polishing the backside of the SiC single-crystal substrate.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein the substrate thinning step is a step of dry etching the backside of the SiC single-crystal substrate.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein the material of the surface ohmic contact electrode is different from that of the Schottky metal portion.
5. The method of manufacturing a semiconductor device according to claim 4 , wherein the surface ohmic contact electrode is a two-layered metal film made of Ti/Al, and the Schottky metal portion is made of titanium or molybdenum.