TEST METHOD ON THE SUPPORT SUBSTRATE OF A SUBSTRATE OF THE "SEMICONDUCTOR ON INSULATOR" TYPE
The invention relates to a test method comprising an electrical connection contact on the support of a substrate of the semiconductor-on-insulator type. This method is remarkable in that it comprises the steps of: a) taking a substrate of the semiconductor-on-insulator type comprising a support substrate entirely covered with an insulator layer and an active layer, a portion of the insulator layer being buried between the active layer and the front face of the support substrate, b) removing a portion of the insulator layer that extends at the periphery of the front face of the support substrate and/or that extends on its rear face, so as to delimit at least one insulator-free accessible area of the support substrate, while retaining at least one portion of the insulator layer on the rear face, c) applying an electrical voltage to the accessible area in order to make the electrical connection contact.
1 .- 13 . (canceled)
14 . A method, comprising:
providing a semiconductor-on-insulator substrate, comprising:
a support substrate including a semiconductor material, the support substrate having a front face and a rear face;
an insulator layer covering the support substrate; and
an active layer including a semiconductor material positioned on the support substrate such that a portion of the insulator layer is buried between the active layer and the front face of the support substrate;
removing a portion of the insulator layer that extends at the periphery of at least one of the front face and the rear face of the support substrate and delimiting at least one insulator-free accessible area of the support substrate while retaining at least one portion of the insulator layer on the rear face of the support substrate; and
applying an electrical voltage to the at least one insulator-free accessible area of the support substrate so as to make an electrical connection contact on the support substrate of the semiconductor-on-insulator substrate.
15 . The method of claim 14 , wherein removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate comprises removing an annular insulator area extending along at least one of the front face and the rear face of the support substrate.
16 . The method of claim 14 , wherein retaining at least one portion of the insulator layer on the rear face of the support substrate comprises retaining at least 50% of a surface area of the insulator layer on the rear face of the support substrate.
17 . The method of claim 14 , wherein removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate comprises routing an annular region of the insulator layer extending at a periphery of the front face of the support substrate.
18 . The method of claim 17 , wherein routing an annular region of the insulator layer extending at a periphery of the front face of the support substrate comprises routing an annular region of the insulator layer over a width of between 0.5 mm and 5 mm.
19 . The method of claim 14 , wherein removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate comprises routing an annular region of the insulator layer extending at a periphery of the rear face of the support substrate.
20 . The method of claim 19 , wherein routing an annular region of the insulator layer extending at a periphery of the rear face of the support substrate comprises routing an annular region of the insulator layer over a width of between 0.5 mm and 15 mm.
21 . The method of claim 14 , wherein removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate comprises at least one of grinding and polishing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate.
22 . The method of claim 14 , wherein removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate comprises chemically etching the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate.
23 . The method of claim 14 , wherein removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate comprises using at least one lithography process to remove the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate.
24 . The method of claim 14 , further comprising manufacturing at least one electronic component on or in the active layer while removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate.
25 . The method of claim 14 , further comprising manufacturing the semiconductor-on-insulator substrate.
26 . The method of claim 25 , wherein removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate comprises removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate after manufacturing the semiconductor-on-insulator substrate.
27 . The method of claim 26 , further comprising manufacturing at least one electronic component on or in the active layer after removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate.
28 . The method of claim 25 , wherein manufacturing the semiconductor-on-insulator substrate comprises bonding a source substrate to the support substrate covered with the insulator layer.
29 . The method of claim 28 , further comprising heat treating the source substrate and the support substrate to stabilize a bond between the source substrate and the support substrate.
30 . The method of claim 29 , further comprising removing the portion of the insulator layer that extends at the periphery of the at least one of the front face and the rear face of the support substrate while manufacturing the semiconductor-on-insulator substrate and after heat treating the source substrate and the support substrate to stabilize the bond between the source substrate and the support substrate.
31 . The method of claim 14 , further comprising selecting the insulator layer to comprise at least one of an oxide, a nitride, and an oxynitride.
32 . The method of claim 14 , wherein applying an electrical voltage to the at least one insulator-free accessible area of the support substrate so as to make an electrical connection contact on the support substrate of the semiconductor-on-insulator substrate comprises testing the semiconductor-on-insulator substrate.
33 . A semiconductor-on-insulator substrate, comprising:
a support substrate including a semiconductor material and having a front face and a rear face;
an insulator layer covering the support substrate; and
an active layer including a semiconductor material positioned on the support substrate such that a portion of the insulator layer is buried between the active layer and the front face of the support substrate;
wherein at least one portion of the support substrate is free of the insulator such that the at least one portion is exposed, at least one portion of the rear face of the support substrate being covered with a portion of the insulator layer, the support substrate having a warpage of less than or equal to 50 μm.
34 . The semiconductor-on-insulator substrate of claim 33 , wherein the portion of the insulator layer covering the at least one portion of the rear face of the support substrate extends over at least 50% of a surface area of the rear face.
35 . The semiconductor-on-insulator substrate of claim 33 , wherein the portion of the insulator layer buried between the active layer and the front face of the support substrate has a thickness of at least 0.2 μm.