Solid-state imaging device and method of manufacturing the same, and imaging apparatus
A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
1. A solid-state imaging device comprising:
a semiconductor substrate provided with an effective pixel region including light receiving sections that photoelectrically convert incident light, the semiconductor substrate having a light receiving face;
an interconnection layer that is provided on a side of the semiconductor substrate that corresponds to a face of the semiconductor substrate opposite to the light receiving face;
a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth in the semiconductor substrate from the light receiving face;
an insulating material that is embedded in at least a part of the first groove portion;
a second groove portion that is provided in an optical black region located at a periphery of the effective pixel region and optically shielded, and that is formed at a predetermined depth in the semiconductor substrate from the light receiving face; and
a light shielding material that is embedded in at least a part of the second groove portion.
2. The solid-state imaging device according to claim 1 , further comprising:
a third groove portion that is provided between the effective pixel region and an optical black region located at a periphery of the effective pixel region and optically shielded, and that is formed at a predetermined depth in the semiconductor substrate from the light receiving face; and
a light shielding material that is embedded in at least a part of the third groove portion.
3. A solid-state imaging device comprising:
a semiconductor substrate provided with an effective pixel region including light receiving sections that photoelectrically convert incident light, the semiconductor substrate having a light receiving face;
an interconnection layer that is provided on a side of the semiconductor substrate that corresponds to a face of the semiconductor substrate opposite to the light receiving face;
a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth in the semiconductor substrate from the light receiving face;
an insulating material that is embedded in at least a part of the first groove portion;
a second groove portion that is provided in an optical black region located at a periphery of the effective pixel region and optically shielded, and that is formed at a predetermined depth in the semiconductor substrate from the light receiving face;
a third groove portion that is provided between the effective pixel region and the optical black region and is formed at a predetermined depth in the semiconductor substrate from the light receiving face; and
a light shielding material that is embedded in at least a part of the second groove portion and at least a part of the third groove portion.
4. A solid-state imaging device comprising:
a semiconductor substrate provided with an effective pixel region including light receiving sections that photoelectrically convert incident light, the semiconductor substrate having a light receiving face;
an interconnection layer that is provided on a side of the semiconductor substrate that corresponds to a face of the semiconductor substrate opposite to the light receiving face;
a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth in the semiconductor substrate from the light receiving face;
an insulating material that is embedded in at least a part of the first groove portion; and
a high-dielectric material film formed between the first groove portion and the insulating material.
5. The solid-state imaging device according to claim 1 , further comprising:
a high-dielectric material film formed between the second groove portion and the light shielding material.
6. The solid-state imaging device according to claim 2 , further comprising:
a high-dielectric material film formed between the third groove portion and the light shielding material.
7. A method of manufacturing a solid-state imaging device, comprising:
providing a semiconductor substrate that has an effective pixel region including light receiving sections that photoelectrically convert incident light, the semiconductor substrate having a light receiving face;
forming a first groove portion having a predetermined depth in the semiconductor substrate from the light receiving face between adjacent light receiving sections of the semiconductor substrate;
embedding an insulating material in at least a part of the first groove portion;
forming an interconnection layer on a side of the semiconductor substrate that corresponds to a face of the semiconductor substrate opposite to the light receiving face;
forming a second groove portion having a predetermined depth in the semiconductor substrate from the light receiving face in an optical black region that is located at a periphery of the effective pixel region and is optically shielded, in addition to forming the first groove portion; and
embedding a light shielding material in at least a part of the second groove portion.
8. The method according to claim 7 , further comprising:
forming a third groove portion having a predetermined depth in the semiconductor substrate from the light receiving face between the effective pixel region and an optical black region that is located at a periphery of the effective pixel region and is optically shielded, in addition to forming the first groove portion; and
embedding a light shielding material in at least a part of the third groove portion.
9. An imaging apparatus comprising:
the solid state imaging device of claim 1 ;
an optical system that focuses incident light onto the light receiving section; and
a signal processing section that processes a signal charge that is photoelectrically converted at the light receiving section.
10. The imaging apparatus according to claim 9 , further comprising:
a third groove portion that is provided between the effective pixel region and an optical black region located at a periphery of the effective pixel region and optically shielded, and that is formed at a predetermined depth in the semiconductor substrate from the light receiving face; and
a light shielding material that is embedded in at least a part of the third groove portion.
11. The solid-state imaging device of claim 1 , further comprising:
an optical device layer formed on the insulating material that is embedded in the first groove portion.
12. The method of claim 7 , further comprising:
forming an optical device layer on the insulating material that is embedded in the first groove portion.
13. The imaging apparatus of claim 9 , further comprising:
an optical device layer formed on the insulating material that is embedded in the first groove portion.