Semiconductor inspection method and device that consider the effects of electron beams
View Patent ↗Disclosed is a device capable of probing with minimal effect from electron beams. Rough probing is made possible using a lower magnification than the magnification usually viewed. When target contact of semiconductor is detected, measurement position is set in the center of picture usually to move probe without moving stage. With the miniaturization, contact can be confirmed only at high magnification, although probe can be confirmed at low magnification on the contrary but it is necessary to display it in real time. Static image obtained at high magnification once is combined with image obtained at low magnification in real time from target contact required for probing and characteristic of probe to be displayed, so that probing at low magnification can be realized to reduce the effects of electron beams and obtain accurate electrical characteristics.
1. A semiconductor inspection device comprising:
a sample stand on which a sample can be put;
an electron beam irradiation optical system capable of irradiating with electron beams;
a deflecting coil capable of changing magnification;
a detector capable of detecting secondary electrons generated from the sample;
a display unit to display a sample image obtained on the basis of signal from the detector; and
one or more probes capable of coming in contact with the sample;
wherein
when the probe is put on the sample, a static image of the sample of high magnification magnified by the deflecting coil and a real-time image of the probe operating at low magnification are combined to be displayed in the display unit.
2. A semiconductor inspection device according to claim 1 , wherein
static image of high magnification is obtained once and static image of low magnification is obtained to show the probe, the static image of low magnification being edited to be combined with the static image of high magnification repeatedly.
3. A semiconductor inspection device according to claim 1 , wherein
static image of high magnification is obtained once and only an image of the probe is cut out, tip of the probe being detected from low-magnification image, the image of the probe cut out being moved to detected position to thereby move the probe.
4. A semiconductor inspection device according to claim 3 , wherein image obtained beforehand by only tip detection of the probe or marker is expressed as a moving probe.
5. A semiconductor inspection device according to claim 1 , wherein
static images of high magnification and low magnification are subjected to image editing processing including color display and outline emphasis to be made easy to understand.
6. A semiconductor inspection method implemented on a device including: a sample stand on which a sample can be put; an electron beam irradiation optical system capable of irradiating with electron beams; a deflecting coil capable of changing magnification; a detector capable of detecting secondary electrons generated from the sample; and one or more probes capable of coming in contact with the sample; the method including:
when the probe is put on the sample, combining a static image of the sample of high magnification magnified by the deflecting coil and an image of the probe operating at low magnification in real time.
7. A semiconductor inspection method according to claim 6 , wherein
static image of high magnification is obtained once and static image of low magnification is obtained to show the probe, the static image of low magnification being edited to be combined with the static image of high magnification repeatedly.
8. A semiconductor inspection method according to claim 6 , wherein
static image of high magnification is obtained once and only the image of the probe is cut out, tip of the probe being detected from low-magnification image, the image of the probe cut out being moved to detected position to thereby move the probe.
9. A semiconductor inspection method according to claim 8 , wherein
image obtained beforehand by only tip detection of the probe or marker is expressed as a moving probe.
10. A semiconductor inspection method according to claim 6 , wherein
static images of high magnification and low magnification are subjected to image editing processing including color display and outline emphasis to be made easy to understand.