Film bulk acoustic resonator comprising a bridge
View Patent ↗A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is disposed between the first electrode and the piezoelectric layer.
1. A thin film bulk acoustic resonator (FBAR) structure, comprising:
a substrate;
a cavity disposed in the substrate;
a first electrode disposed over the substrate and the cavity, wherein the first electrode substantially covers the cavity;
a planarization layer abutting an edge of the first electrode;
a piezoelectric layer disposed over the first electrode and the planarization layer;
a second electrode disposed over the piezoelectric layer; and
a bridge disposed in the piezoelectric layer and along a perimeter of an active region of the FBAR, the bridge being disposed partially over the substrate and extending past an edge of the cavity.
2. The FBAR structure as claimed in claim 1 , wherein the bridge comprises an unfilled bridge, containing air.
3. The FBAR structure as claimed in claim 1 , wherein the bridge comprises a filled bridge, containing a dielectric material or a metal.
4. The FBAR structure as claimed in claim 3 , wherein the dielectric material comprises one of non-etchable borosilicate glass (NEBSG), carbon doped silicon dioxide (CDO), or silicon carbide (SiC).
5. The FBAR structure as claimed in claim 3 , wherein the metal is one of tungsten (W), molybdenum (Mo), copper (Cu) cu iridium (Ir).
6. The FBAR structure as claimed in claim 1 , wherein the bridge has a trapezoidal cross-sectional shape.
7. A thin film bulk acoustic resonator (FBAR) structure, comprising:
a substrate;
a cavity disposed in the substrate;
a first electrode disposed over a substrate, wherein the first electrode substantially covers the cavity;
a planarization layer abutting an edge of the first electrode;
a piezoelectric layer disposed over the first electrode and the planarization layer;
a second electrode disposed over the piezoelectric layer;
a first bridge disposed in the piezoelectric layer and along a perimeter of an active region of the FBAR, the bridge being disposed partially over the substrate and extending past an edge of the cavity; and
a second bridge disposed between the piezoelectric layer and the second electrode.
8. The FBAR structure as claimed in claim 7 , wherein each of the first bridge and the second bridge comprises an unfilled bridge, containing air.
9. The FBAR structure as claimed in claim 7 , wherein each of the first bridge and the second bridge comprises a filled bridge, containing a fill material having an acoustic impedance.
10. The FBAR structure as claimed in claim 7 , wherein the perimeter is a first perimeter of the active region of the FBAR, and the second bridge is disposed along a second perimeter of the FBAR.
11. The FBAR structure as claimed in claim 10 , wherein the second perimeter is the same as the first perimeter.
12. The FBAR structure as claimed in claim 10 , wherein the second perimeter is different than the first perimeter.
13. A thin film bulk acoustic resonator (FBAR) structure, comprising:
a first electrode disposed over a substrate;
a piezoelectric layer disposed over the first electrode;
a second electrode disposed over the piezoelectric layer;
a first bridge disposed between the first electrode and the piezoelectric layer, the first bridge being an unfilled bridge containing air; and
a second bridge disposed between the piezoelectric layer and the second electrode, the second bridge being a filled bridge, containing a fill material having an acoustic impedance.
14. The FBAR structure as claimed in claim 13 , wherein the first bridge is disposed along a first perimeter of the FBAR, and the second bridge is disposed along a second perimeter of the FBAR.
15. The FBAR structure as claimed in claim 14 , wherein the second perimeter is the same as the first perimeter.
16. The FBAR structure as claimed in claim 14 , wherein the second perimeter is different than the first perimeter.
17. A thin film bulk acoustic resonator (FBAR) structure, comprising:
a first electrode disposed over a substrate;
a piezoelectric layer disposed over the first electrode;
a second electrode disposed over the piezoelectric layer;
a first bridge disposed between the first electrode and the piezoelectric layer, the first bridge being a filled bridge containing a fill material having an acoustic impedance; and
a second bridge disposed between the piezoelectric layer and the second electrode, the second bridge being a unfilled bridge containing air.
18. The FBAR structure as claimed in claim 17 , wherein the first bridge is disposed along a first perimeter of an active region of the FBAR, and the second bridge is disposed along a second perimeter of the FBAR.
19. The FBAR structure as claimed in claim 18 , wherein the second perimeter is the same as the first perimeter.
20. The FBAR structure as claimed in claim 18 , wherein the second perimeter is different than the first perimeter.