Method and system for fast inspecting defects

1. A method for fast identifying defects, comprising:

scanning a specimen to generate scanned raw data;

identifying suspicious defects or critical patterns in said scanned raw data by using a first image-processing algorithm with a first set of parameters;

saving said scanned raw data as an first image;

identifying regions of interests in the first image according to the suspicious defects or the critical patterns;

marking locations of the regions of interest in the first image;

reviewing said first image at said locations of the regions of interests to perform a first defect analysis to identify defects; and

reviewing said first image at said locations of the regions of interests to perform a second defect analysis to identify defects;

wherein the first defect analysis utilizes the first image-processing algorithm with a second set of parameters different from the first set of parameters, and the second defect analysis utilizes a second image-processing algorithm.

2. The method according to claim 1 , wherein the scanned step is processed by using an E-beam inspection tool.

3. The method according to claim 1 , wherein the scanned step is processed by using an optical inspection tool.

4. The method according to claim 1 , wherein the specimen includes a plurality of dies thereon.

5. The method according to claim 4 , wherein the regions of interest are identified in one die of the plurality of dies.

6. The method according to claim 5 , wherein the first defect analysis and second defect analysis review all other dies on the original image.

7. A non-transitory computer readable medium disposed within a defect inspecting apparatus coupling to an image forming apparatus and a storage device, the computer readable medium encoded with a computer program implementing a method for fast inspecting defects, wherein the method comprises steps of:

scanning a surface of a wafer to generate scanned raw data;

identifying suspicious defects or critical patterns in said scanned raw data by using a first image-processing algorithm with a first set of parameters by the defect inspecting apparatus;

saving scanned raw data from the scanning step as an first image in the storage device;

identifying regions of interest in the first image according to the suspicious defects or the critical patterns by the defect inspecting apparatus;

marking locations of the regions of interest in the first image by the defect inspecting apparatus; and

reviewing said first image at said locations of the regions of interests to perform a first defect analysis to identify defects; and

reviewing said first image at said locations of the regions of interests to perform a second defect analysis to identify defects;

wherein the first defect analysis utilizes the first image-processing algorithm with a second set of parameters different from the first set of parameters, and the second defect analysis utilizes a second image-processing algorithm.

8. The computer readable medium according to claim 7 , wherein the wafer includes a plurality of dies thereon.

9. The computer readable medium according to claim 7 , wherein the suspicious defects or the critical patterns are identified in one die of the plurality of dies.

10. The computer readable medium according to claim 9 , wherein the first defect analysis and second defect analysis review the locations of the plurality of dies on the original image.

11. The computer readable medium according to claim 9 , wherein the first defect analysis and second defect analysis review the locations of all other dies on the original image.

12. The computer readable medium according to claim 7 , wherein the scanning step is performed by using an E-beam inspection tool or an optical inspection tool.

13. A system for fast inspecting defects, comprising:

a charged particle beam probe generator for generating a charged particle beam probe;

a charged particle beam deflection module for scanning the charged particle beam probe across a surface of a wafer;

an image forming apparatus for detecting secondary charged particles emitted from the surface of the region of interest being bombarded by the charged particle beam probe and forming at least one scanned raw image accordingly;

a storage module for saving the scanned raw image as an first image; and

a defect inspection module encoded with a computer program implementing a method for fast inspecting defects, wherein the method comprises steps of:

identifying suspicious defects or critical patterns in said scanned raw data by using a first image-processing algorithm with a first set of parameters;

identifying regions of interest in the first image according to the suspicious defects or the critical patterns;

marking locations of the regions of interest in the first; and

reviewing said first image at said locations of the regions of interests to perform a first defect analysis to identify defects; and

reviewing said first image at said locations of the regions of interests to perform a second defect analysis to identify defects;

wherein the first defect analysis utilizes the first image-processing algorithm with a second set of parameters different from the first set of parameters, and the second defect analysis utilizes a second image-processing algorithm.

14. The system according to claim 13 , wherein the wafer includes a plurality of dies thereon.

15. The system according to claim 13 , wherein the suspicious defects or the critical patterns are identified in one die of the plurality of dies.

16. The system according to claim 15 , wherein the first defect analysis and second defect analysis review the locations of the plurality of dies on the original image.

17. The system according to claim 15 , wherein the first defect analysis and second defect analysis review the locations of all other dies on the original image.