IP Library Granted Patent US 8,582,364
Granted Patent B2
US 8,582,364 · App. 13/155,347 · Granted Nov 12, 2013

Fast programming memory device

Inventors: Marco Maccarrone (Palestro, IT); Giuseppe Giannini (Monza, IT); Demetrio Pellicone (Castrolibero, IT)
Assignee: Micron Technology, Inc.
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Quick Facts
Patent No.
US 8,582,364
App. No.
13/155,347
Granted
Nov 12, 2013
Kind
B2
Abstract

In an embodiment of a memory device including a matrix of memory cells wherein the memory cells are arranged in a plurality of memory cells strings each one including at least two serially-connected memory cells, groups of at least two memory cells strings being connected to a respective bit line, and wherein said memory cells are adapted to be programmed into at least a first programming state and a second programming state, a method of storing data comprising exploiting a single memory cell for each of the memory cells string for writing the data, wherein said exploiting includes bringing the single memory cell to the second programming state, the remaining memory cells of the string being left in the first programming state.

Claims (36)

1. A memory, comprising: a data node; a reference node;

a programming node; non-volatile memory cells serially coupled between the data and reference nodes, one of the cells coupled to the programming node; and

a control circuit coupled to the data, reference, and programming nodes and operable to program the one memory cell with a single programming pulse.

2. A memory, comprising:

bit lines;

a reference node;

word lines;

groups of non-volatile memory cells, each group serially coupled between a respective one of the bit lines and the reference node, each cell in each group coupled to a respective one of the word lines; and

a control circuit coupled to the bit lines, reference node, and word lines, and operable to erase all of the memory cells in each group and to program only one memory cell in each group.

3. The memory of claim 2 wherein the control circuit is operable to program the one memory cell in each group in association with a transition of a multi-mode circuit to a low-power operating mode.

4. A memory, comprising:

bit lines;

a reference node;

word lines;

groups of non-volatile memory cells, each group serially coupled between a respective one of the bit lines and the reference node, each cell in each group coupled to a respective one of the word lines; and

a control circuit coupled to the bit lines, reference node, and word lines, and operable to program one memory cell in each group with a single programming pulse.

5. A system, comprising:

a memory including a data node, a reference node, a programming node, non-volatile memory cells serially coupled between the data and reference nodes, one of the cells coupled to the programming node, and a control circuit coupled to the data, reference, and programming nodes and operable to erase all of the memory cells and to program only the one memory cell; and

a controller coupled to the memory.

6. The system of claim 5 , further comprising:

first and second integrated-circuit dies;

wherein the memory is disposed on the first die; and

wherein the controller is disposed on the second die.

7. The memory of claim 5 , further comprising:

an integrated-circuit die; and

wherein the memory and controller are disposed on the die.

8. The memory of claim 5 wherein the controller is operable to program the one memory cell in association with a transition of the memory from a first operating mode to a second operating mode.

9. The memory of claim 5 wherein the controller is operable to program the one memory cell in association with a transition of the controller from a first operating mode to a second operating mode.

10. A system, comprising:

a memory including a data node, a reference node, a programming node, non-volatile memory cells serially coupled between the data and reference nodes, one of the cells coupled to the programming node, and a control circuit coupled to the data, reference, and programming nodes and operable to program the one memory cell with a single programming pulse; and a controller coupled to the memory.

11. The system of claim 10 , further comprising:

first and second integrated-circuit dies; wherein the memory is disposed on the first die; and

wherein the controller is disposed on the second die.

12. The memory of claim 10 , further comprising:

an integrated-circuit die; and

wherein the memory and controller are disposed on the die.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
Priority Claims (1)
IT MI2007A1012 · May 18, 2007 · national
Continuity (2)
Division 12123359 · May 19, 2008
Related Publication 20110235411A1 · Sep 29, 2011