Synthetic thermoelectric materials comprising phononic crystals
Synthetic thermoelectric materials comprising phononic crystals can simultaneously have a large Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Such synthetic thermoelectric materials can enable improved thermoelectric devices, such as thermoelectric generators and coolers, with improved performance. Such synthetic thermoelectric materials and devices can be fabricated using techniques that are compatible with standard microelectronics.
1. A synthetic thermoelectric material, comprising a phononic crystal comprising a periodic array of scattering centers embedded in a host matrix, wherein the scattering center material has a sufficiently different acoustic impedance from the host matrix material to create a phononic bandgap that reduces thermal conductivity, and wherein the host matrix material comprises a thermoelectric material.
2. The synthetic thermoelectric material of claim 1 , wherein the periodic array comprises a two-dimensional array.
3. The synthetic thermoelectric material of claim 1 , wherein the periodic array comprises a one- or a three-dimensional array.
4. The synthetic thermoelectric material of claim 1 , wherein the thermoelectric material comprises an n- or p-type semiconductor.
5. The synthetic thermoelectric material of claim 4 , wherein the n- or p-type semiconductor comprises doped silicon.
6. The synthetic thermoelectric material of claim 4 , wherein the n- or p-type semiconductor comprises doped silicon carbide.
7. The synthetic thermoelectric material of claim 1 , wherein the scattering center material comprises air.
8. The synthetic thermoelectric material of claim 1 , wherein the scattering center material comprises silicon oxide, polysilicon, or tungsten.
9. The synthetic thermoelectric material of claim 1 , wherein the phononic bandgap provides a reduced thermal conductivity of the synthetic thermoelectric material compared to the thermoelectric material.
10. A thermoelectric device, comprising:
a first synthetic thermoelectric material layer comprising a phononic crystal comprising a two-dimensional periodic array of scattering centers embedded in a host matrix comprising a n-type semiconductor thermoelectric material, wherein the scattering center material has a different acoustic impedance than the host matrix material; and
a second synthetic thermoelectric material layer comprising a phononic crystal comprising a two-dimensional periodic array of scattering centers embedded in a host matrix comprising a p-type semiconductor thermoelectric material, wherein the scattering center material has a different acoustic impedance than the host matrix material; and
wherein the first and second synthetic thermoelectric material layers are electrically connected at a hot side to provide a first pair of synthetic thermoelectric material layers, and the opposite cold sides of the first pair are connected via a thermoelectric power circuit.
11. The thermoelectric device of claim 10 , wherein the first pair of synthetic thermoelectric material layers are arranged as co-planar layers.
12. The thermoelectric device of claim 10 , wherein the first pair of synthetic thermoelectric material layers are arranged as stacked layers.
13. The thermoelectric device of claim 12 , further comprising at least one additional pair of synthetic thermoelectric material layers stacked layer-by-layer with the first pair of stacked layers to provide a first module.
14. The thermoelectric device of claim 13 , further comprising at least one additional module staged side-by-side with the first module to provide a cascaded thermoelectric device.
15. The thermoelectric device of claim 10 , further comprising at least one additional pair of synthetic thermoelectric material layers connected in series with the first pair.
16. The thermoelectric device of claim 10 , further comprising at least one additional pair of synthetic thermoelectric material layers connected in parallel with the first pair.
17. The thermoelectric device of claim 10 , wherein a voltage is generated in the thermoelectric power circuit when heat is applied to the hot side, thereby providing a thermoelectric generator.
18. The thermoelectric device of claim 10 , wherein heat is extracted from the hot side when a voltage is applied to the thermoelectric power circuit, thereby providing a thermoelectric cooler.
19. The thermoelectric device of claim 10 , wherein the n-type semiconductor thermoelectric material comprises n-doped silicon or silicon carbide.
20. The thermoelectric device of claim 10 , wherein the p-type semiconductor thermoelectric material comprises p-doped silicon or silicon carbide.