Vertical light-emitting diode
View Patent ↗A vertical light-emitting diode with a short circuit protection function includes a heat dissipation substrate, a second electrode, a welding metal layer and a third electrode; a semiconductor light-emitting layer formed on the third electrode; a barrier for the semiconductor light-emitting layer with an isolation trench, so that the barrier for the semiconductor light-emitting layer surrounds the semiconductor light-emitting layer on a central region of the third electrode, with the isolation trench therebetween. The barrier for the semiconductor light-emitting layer has a structure the same as the semiconductor light-emitting layer, and the isolation trench exposes the third electrode. A fourth electrode is formed on the semiconductor light-emitting layer. The barrier prevents the metal particles in chip dicing and the conductive adhesive in packaging from reaching the semiconductor light-emitting layer, thereby providing short circuit protection and improving the reliability of the vertical light-emitting diode.
1. A vertical light-emitting diode, comprising:
a heat dissipation substrate;
a first electrode, formed on a surface of the heat dissipation substrate;
a second electrode, formed on the other surface of the heat dissipation substrate;
a welding metal layer, formed on the second electrode;
a third electrode, formed on the welding metal layer;
a semiconductor light-emitting layer, formed on a central region of the third electrode, for emitting light;
a barrier for the semiconductor light-emitting layer, formed on a peripheral region of the third electrode, wherein, the barrier surrounds the semiconductor light-emitting layer, an isolation trench is provided between the barrier and the semiconductor light-emitting layer to isolate the semiconductor light-emitting layer from the barrier fully, the isolation trench exposes the third electrode at its bottom; and the barrier has a structure the same as the semiconductor light-emitting layer; and
a fourth electrode, formed only on the semiconductor light-emitting layer.
2. The vertical light-emitting diode according to claim 1 , wherein, the fabrication material for the heat dissipation substrate is any one or more of: GaAs, Ge, Si, Mo, Cu, and WCu.
3. The vertical light-emitting diode according to claim 1 , wherein, the isolation trench between the semiconductor light-emitting layer and the barrier for the semiconductor light-emitting layer is formed by etching.
4. The vertical light-emitting diode according to claim 1 , wherein, the semiconductor light-emitting layer comprises: a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type, which are stacked in that order.
5. The vertical light-emitting diode according to claim 4 , wherein, the barrier for the semiconductor light-emitting layer comprises:
a semiconductor layer of a first conductivity type, made of at least GaN;
an active layer made of at least InGaN; and
a semiconductor layer of a second conductivity type, made of at least GaN, and wherein, the barrier for the semiconductor light-emitting layer further comprises:
a limiting layer of the second conductivity type, formed between the active layer and the semiconductor layer of the second conductivity type, the limiting layer of the second conductivity type being made of InGaN or AlGaN.
6. The vertical light-emitting diode according to claim 1 , wherein, the barrier for the semiconductor light-emitting layer comprises:
a semiconductor layer of a first conductivity type, made of at least GaN;
an active layer made of at least InGaN; and
a semiconductor layer of a second conductivity type, made of at least GaN, and wherein, the barrier for the semiconductor light-emitting layer further comprises:
a limiting layer of the second conductivity type, formed between the active layer and the semiconductor layer of the second conductivity type, the limiting layer of the second conductivity type being made of InGaN or AlGaN.
7. The vertical light-emitting diode according to claim 3 , wherein, the barrier for the semiconductor light-emitting layer comprises:
a semiconductor layer of a first conductivity type, made of at least GaN;
an active layer made of at least InGaN; and
a semiconductor layer of a second conductivity type, made of at least GaN, and wherein, the barrier for the semiconductor light-emitting layer further comprises:
a limiting layer of the second conductivity type, formed between the active layer and the semiconductor layer of the second conductivity type, the limiting layer of the second conductivity type being made of InGaN or AlGaN.