Electronic device for voltage switchable dielectric material having high aspect ratio particles
One or more embodiments provide for a device that utilizes voltage switchable dielectric material having semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material on the device.
1. An electronic device comprising:
a layer of voltage switchable dielectric (VSD) material formed by:
(i) creating a mixture, the mixture comprising a polymer binder, a first set of conductor and/or semi-conductor particles, and a second set of nanoscale high aspect (HAR) particles other than said first set of conductor and/or semi-conductor particles;
(ii) applying the mixture to a substrate; and
(iii) curing the mixture on the substrate;
wherein an amount of particles dispersed in the binder, including the first set of conductor and/or semi-conductor particles and the second set of nanoscale HAR particles, is sufficiently low so that a percolation threshold of the VSD material is not reached.
2. The electronic device of claim 1 , further comprising:
a first electrode and a second electrode, and
wherein the mixture is applied to a span between the first and second electrode.
3. The electronic device of claim 1 , wherein the layer of VSD material is provided as a layer within a thickness of the substrate.
4. The electronic device of claim 3 , wherein the layer of VSD material underlies one or more contact elements for connecting the substrate to another device, and wherein the one or more contact elements include an aperture to electrically connect a surface of an individual contact element to the layer of VSD material.
5. The electronic device of claim 1 , wherein the electronic device is a device selected from a group consisting of a light-emitting diode, a radio-frequency device, a discrete device, and a semi-conductor package.
6. The electronic device of claim 1 , wherein the first set of conductor and/or semi-conductor particles and the second set of nanoscale high aspect ratio (HAR) particles are substantially uniformly distributed in the binder.
7. The electronic device of claim 6 , wherein the second set of nanoscale high aspect ratio (HAR) particles comprise single and/or multi-walled carbon nanotubes.
8. The electronic device of claim 1 , wherein the conductor and/or semiconductor particles include a metal or a metal complex.
9. The electronic device of claim 1 , wherein creating the mixture comprises:
creating a resin mixture including the polymer binder and the second set of nanoscale HAR particles; and
creating the mixture by adding the first set of conductor and/or semi-conductor particles to the resin mixture.
10. The electronic device of claim 1 , wherein the first set of conductor and/or semi-conductor comprise conductor particles that have a concentration by percentage of volume that ranges between 0.01-70%.
11. The electronic device of claim 1 , wherein the first set of conductor and/or semi-conductor comprise semi-conductor particles that have a concentration by percentage of volume that ranges between 0.01-95%.
12. The electronic device of claim 1 , wherein the binder has a concentration by percentage of volume that ranges between 5-99%.
13. An electronic device comprising:
a layer of voltage switchable dielectric (VSD) material formed by:
(i) creating a mixture, the mixture comprising a polymer binder, a first set of conductor and/or semi-conductor particles, and a second set of nanoscale high aspect (HAR) particles other than said first set of conductor and/or semi-conductor particles;
(ii) applying the mixture to a target region of a substrate; and
(iii) curing the mixture on the substrate;
wherein an amount of particles dispersed in the binder, including the first set of conductor and/or semi-conductor particles and the second set of nanoscale HAR particles, is sufficiently low so that a percolation threshold of the VSD material is not reached.
14. The electronic device of claim 13 , further comprising:
a first electrode and a second electrode, and
wherein target region is a span between the first and second electrode.
15. The electronic device of claim 14 , wherein applying the mixture to the target region of the substrate comprises:
applying the mixture to an area including the target region;
covering the target region with a mask; and
removing portion of the mixture not covered by the mask.
16. The electronic device of claim 13 , wherein curing the mixture on the substrate comprises:
immersing the substrate with the mixture applied to the target region in an electrolytic solution; and
applying a voltage to the electrolytic solution.
17. The electronic device of claim 16 , wherein applying the voltage to the electrolytic solution comprises applying a number of voltage pules to the electrolytic solution, wherein the duration of the applied voltage pulses is less than a breakdown time of the VSD material.
18. An electronic device comprising:
a layer of voltage switchable dielectric (VSD) material formed by:
(i) creating a mixture, the mixture comprising a polymer binder, a first set of conductor and/or semi-conductor particles, and a second set of nanoscale high aspect (HAR) particles other than said first set of conductor and/or semi-conductor particles;
(ii) applying the mixture to a substrate; and
(iii) curing the mixture on the substrate;
wherein an amount of particles dispersed in the binder, including the first set of conductor and/or semi-conductor particles and the second set of nanoscale HAR particles, is sufficiently low so that a percolation threshold of the VSD material is not reached, and
wherein the HAR particles have a concentration by percentage of volume that ranges between 0.01-95%.