Systems, Methods and Products Involving Aspects of Laser Irradiation, Cleaving, and/or Bonding Silicon-Containing Material to Substrates
Systems, methods and products by process are disclosed relating to structures and/or fabrication thereof as relating, for example, to optical/electronic applications such as solar cells and displays. In one exemplary implementation, there is provided a method of producing a composite structure. Moreover, the method may include engaging a silicon-containing material into contact with a surface of the substrate and irradiating/treating the silicon-containing piece with a laser.
1 . A method of producing a composite structure composed of a silicon-containing material bonded to a substrate, the method comprising:
implanting ions into silicon-containing material to a depth;
providing a SiN/SiO2/Si-containing layer/coating on the substrate;
engaging the silicon-containing piece into contact with the substrate; and
irradiating/treating the silicon-containing piece with a laser having a wavelength of between about 350 nm to about 1070 nm.
2 . The method of claim 1 further comprising providing a plurality of SiN/SiO2/Si-containing layers/coatings on the substrate.
3 . The method of claim 2 wherein the plurality of layers/coatings includes a first layer/coating comprising SiN.
4 . (canceled)
5 . The method of claim 1 wherein the substrate is a borosilicate/borofloat glass or a soda-lime glass.
6 - 16 . (canceled)
17 . The method of claim 1 further comprising cleaving the silicon-containing material along a surface established at about the depth at which the ions are implanted.
18 - 19 . (canceled)
20 . The method of claim 1 wherein the substrate includes a base portion composed of glass, plastic or metal.
21 . (canceled)
22 . The method of claim 1 further comprising of a step of annealing the composite structure.
23 - 32 . (canceled)
33 . The method of claim 1 wherein the silicon-containing piece is of a thickness of less than about 100 microns such that, after completion of the laser irradiation step, the structure is thicker (bulges) at a region where the silicon-containing piece was originally placed.
34 . (canceled)
35 . A method of producing a composite structure composed of a silicon-containing material bonded to a substrate, the method comprising:
implanting ions into silicon-containing material to a depth;
holding the silicon-containing piece into contact with a surface of the substrate, wherein the substrate includes a SiN/SiO2/Si-containing layer/coating on the surface;
irradiating/treating the silicon-containing piece with a laser having a wavelength of between about 350 nm to about 1070 nm; and
cleaving the silicon-containing material along a surface established at about the depth at which the ions are implanted.
36 . The method of claim 35 wherein the substrate includes a plurality of SiN/SiO2/Si-containing layers/coatings provided on the surface prior to engaging the piece.
37 . The method of claim 35 wherein the plurality of layers/coatings includes a first layer/coating comprising SiN.
38 - 48 . (canceled)
49 . The method of claim 51 wherein the substrate comprises aluminosilicate glass.
50 . (canceled)
51 . The method of claim 82 wherein the layer/coating comprises amorphous silicon or poly silicon.
52 - 55 . (canceled)
56 . The method of claim 1 wherein the step of irradiation comprises:
a first pass of the laser at an energy density of between about 0.3 and about 3 J/cm2.
57 . (canceled)
58 . The method of claim 82 wherein the step of irradiation comprises:
a first pass of the laser at an energy density of between about 0.3 and about 1 J/cm2;
a second pass of the laser at an energy density of between about 0.5 and about 1.5 J/cm2; and
a third pass of the laser at an energy density of between about 1 and about 3 J/cm2.
59 . (canceled)
60 . The method of claim 82 wherein the step of irradiation comprises:
a first pass of the laser, at a speed/rate of about 0.0001 to about 0.01 cm 2 /sec, at an energy density of between about 0.5 and about 1 J/cm2; and
a second pass of the laser, at a speed/rate of about 0.01 to about 10 cm 2 /sec at an energy of between about 1 and about 3 J/cm2.
61 . The method of claim 51 wherein the step of irradiation comprises:
a first pass of the laser, at a speed/rate of about 0.0001 to about 0.01 cm 2 /sec, at an energy density of between about 0.5 and about 1 J/cm2;
a second pass of the laser, at a speed/rate of about 0.01 to about 10 cm 2 /sec at an energy of between about 1 and about 2 J/cm2; and
a third pass of the laser, at a speed/rate of about 0.01 to about 10 cm 2 /sec at an energy of between about 2 and about 3 J/cm2.
62 - 65 . (canceled)
66 . The method of claim 82 wherein the silicon-containing element is a layer, a piece or a wafer.
67 - 81 . (canceled)
82 . A method of producing a composite structure within a process of fabricating a flat panel display, the composite structure composed of a silicon-containing material bonded to a substrate, the method comprising:
engaging the silicon-containing material into contact with a surface of the substrate, wherein the silicon-containing material has ions implanted therein to a depth and the substrate has a SiN/SiO2/Si-containing layer/coating on the surface; and
irradiating/treating the silicon-containing piece with a laser having a wavelength of between about 350 nm to about 1070 nm.