IP Library Patent Application 13161122
Patent Application
App. No. 13/161,122

PHOTOVOLTAIC MODULE AND METHOD OF MANUFACTURING A PHOTOVOLTAIC MODULE HAVING AN ELECTRODE DIFFUSION LAYER

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Patent No.
US None
App. No.
13/161,122
Abstract

A photovoltaic module that converts incident light received through a light transmissive cover sheet into a voltage is provided. The photovoltaic module includes a substrate, conductive upper and lower layers between the substrate and the cover sheet, and a semiconductor layer stack between the conductive upper and lower layers. The conductive lower layer includes an electrode diffusion layer between a lower electrode and a conductive light transmissive layer. The electrode diffusion layer restricts diffusion of the lower electrode of the conductive lower layer into the conductive light transmissive layer during deposition of the semiconductor layer stack. The incident light is converted by the semiconductor layer stack into the voltage potential between the conductive upper and lower layers.

Claims (31)

1 . A photovoltaic module configured to convert incident light received through a light transmissive cover sheet into a voltage, the photovoltaic module including:

a substrate;

conductive upper and lower layers disposed between the substrate and the cover sheet, the conductive lower layer including an electrode diffusion layer between a lower electrode and a conductive light transmissive layer; and

a semiconductor layer stack deposited between the conductive lower and upper layers, the electrode diffusion layer restricting diffusion of the lower electrode of the conductive lower layer into the conductive light transmissive layer during deposition of the semiconductor layer stack, wherein the incident light is converted by the semiconductor layer stack into the voltage between the conductive upper and lower layers.

2 . The photovoltaic module of claim 1 , wherein the electrode diffusion layer electrically couples the lower electrode with the conductive light transmissive layer.

3 . The photovoltaic module of claim I, wherein the electrode diffusion layer has a diffusion coefficient that is smaller than a diffusion coefficient of the lower electrode.

4 . The photovoltaic module of claim 1 , wherein the electrode diffusion layer is light transmissive such that at least some of the incident light passes through the electrode diffusion layer and is reflected off of the lower electrode.

5 . The photovoltaic module of claim 1 , wherein the electrode diffusion layer is formed from a metal or metal alloy.

6 . The photovoltaic module of claim 1 , wherein the electrode diffusion layer is formed from an electrically insulative or semiconductive material doped with a conductive material.

7 . The photovoltaic module of claim 1 , wherein a thickness of the electrode diffusion layer that extends from the lower electrode to the conductive light transmissive layer is based on one or more wavelengths of the incident light that is absorbed by the semiconductor layer stack.

8 . A method for manufacturing a photovoltaic module having a substrate, a conductive lower electrode above the substrate, and a cover sheet through which incident light is received, the method including:

depositing an electrode diffusion layer above the lower electrode;

depositing a conductive light transmissive layer above the electrode diffusion layer, the conductive light transmissive layer electrically coupled with the lower electrode by the electrode diffusion layer;

depositing a semiconductor layer stack above the conductive light transmissive layer, the electrode diffusion layer restricting diffusion of the lower electrode into the conductive light transmissive layer during deposition of the semiconductor layer stack; and

depositing a conductive upper layer above the semiconductor layer stack, wherein the semiconductor layer stack converts the incident light into a voltage potential between the lower electrode and the conductive upper layer.

9 . The method of claim 8 , wherein the electrode diffusion layer electrically couples the lower electrode with the conductive light transmissive layer.

10 . The method of claim 8 , wherein the electrode diffusion layer has a diffusion coefficient that is smaller than a diffusion coefficient of the lower electrode.

11 . The method of claim 8 , wherein the electrode diffusion layer is light transmissive such that at least some of the incident light passes through the electrode diffusion layer and is reflected off of the lower electrode.

12 . The method of claim 8 , wherein the electrode diffusion layer is deposited as a metal or metal alloy.

13 . The method of claim 8 , wherein the electrode diffusion layer is deposited be depositing an electrically insulative or semiconductive material that is doped with a conductive material.

14 . The method of claim 8 , wherein a thickness of the electrode diffusion layer that extends from the lower electrode to the conductive light transmissive layer is based on one or more wavelengths of the incident light that is absorbed by the semiconductor layer stack.

15 . The method of claim 8 , further comprising removing a portion of the lower electrode, the electrode diffusion layer, and the conductive light transmissive layer after the conductive light transmissive layer is deposited, the removing operation separating the lower electrodes, the electrode diffusion layers, and the conductive light transmissive layers in adjacent photovoltaic cells of the module.

16 . The method of claim 8 , wherein the depositing of the semiconductor layer stack is performed at a temperature between 250 and 350 degrees Celsius.

17 . A photovoltaic module having a cover sheet through which incident light is received, the photovoltaic module comprising:

a substrate

an N-I-P stack of semiconductor layers disposed between the substrate and the cover sheet;

a conductive upper layer electrically coupled with the N-I-P stack and disposed between the N-I-P stack and the cover sheet; and

a conductive lower layer electrically coupled with the N-I-P stack and disposed between the substrate and the N-I-P stack, the conductive lower layer including a lower electrode and a conductive light transmissive layer with an electrode diffusion layer between the lower electrode and the conductive light transmissive layer, the electrode diffusion layer preventing diffusion of the lower electrode into the conductive light transmissive layer, wherein the N-I-P stack converts the incident light into a voltage between the conductive upper and lower layers.

18 . The photovoltaic module of claim 17 , wherein the electrode diffusion layer electrically couples the conductive light transmissive layer with the lower electrode.

19 . The photovoltaic module of claim 17 , wherein the electrode diffusion layer includes an electrically insulative or semiconductive material doped with a conductive material.

20 . The photovoltaic module of claim 17 , wherein the electrode diffusion layer extends from the lower electrode to the conductive light transmissive layer and prevents the lower electrode from diffusing into the conductive light transmissive layer during deposition of the semiconductor layer stack.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 15, 2011
From: COAKLEY, KEVIN; GIROTRA, KUNAL
To: THINSILICON CORPORATION
Reel/Frame 026459/0049 →