Method of manufacturing a semiconductor device and semiconductor device
A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
1. A semiconductor device, comprising:
a first wiring layer formed over a semiconductor substrate;
a dielectric film formed over the first wiring layer;
a first opening formed in the dielectric film;
a second opening formed in the first opening and reaching the first wiring layer;
a first metal film containing a first metal and formed at a bottom and a sidewall of the first opening and at a sidewall of the second opening;
a second metal film containing a second metal and formed at the bottom and the sidewall of the first opening and at the bottom and the sidewall of the second opening, wherein a bottom of the second opening is free of the first metal;
a third metal film containing the first metal and the second metal and formed at the sidewall of the second opening; and
a conductive material buried in the second opening and the first opening.
2. The semiconductor device according to claim 1 , wherein
the first metal includes any one of titanium, zirconium, and manganese, or alloys thereof.
3. The semiconductor device according to claim 1 , wherein
the second metal includes any one of tantalum and tungsten, or alloys thereof.
4. The semiconductor device according to claim 1 , wherein
the conductive material includes copper.